SVD7N65AF

SVD7N65AT SILAN | Alldatasheet

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Technical content

SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES

∗ 7A,650V,R DS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. Package Marking Material Packing SVD7N65AT TO-220-3L SVD7N65AT Pb free Tube SVD7N65AF TO-220F-3L SVD7N65AF Pb free Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.11.10 Http://www.silan.com.cn Page 1 of 7 Free Datasheet http://www.datasheet-pdf.com/

SVD7N65AT/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.11.10 Http://www.silan.com.cn Page 2 of 7 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Rating Parameter Symbol SVD7N65AT SVD7N65AF Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Drain Current ID 7.0 A Drain Current Pulsed IDM 28 A 160 52 W Power Dissipation(TC=25°C) -Derate above 25°C PD 1.28 0.42 W/°C Single Pulsed Avalanche Energy (Note 1) EAS 609 mJ Operation Junction Temperature TJ -55～+150 °C Storage Temperature Tstg -55～+150 °C THERMAL CHARACTERISTICS Rating Parameter Symbol SVD7N65AT SVD7N65AF Unit Thermal Resistance, Junction-to-Case RθJC 0.78 2.4 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 120 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 10 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=3.5A -- 1.1 1.4 Ω Input Capacitance Ciss -- 1035 -- Output Capacitance Coss -- 97 -- Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1.0MHZ -- 10 -- pF Turn-on Delay Time td(on) -- 19 -- Turn-on Rise Time tr -- 49 -- Turn-off Delay Time td(off) -- 88 -- Turn-off Fall Time tf VDD=325V, ID=7.0A, RG=25Ω ns Total Gate Charge Qg -- 26.8 -- Gate-Source Charge Qgs -- 5.1 -- Gate-Drain Charge Qgd VDS=520V, ID=7.0A, VGS=10V nC Free Datasheet http://www.datasheet-pdf.com/

SVD7N65AT/F_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS -- -- 7.0 Pulsed Source Current ISM Integral Reverse P-N Junction Diode in the MOSFET -- -- 28 A Diode Forward Voltage VSD IS=7.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr -- 365 -- ns Reverse Recovery Charge Qrr IS=7.0A,VGS=0V, dIF/dt=100A/µS -- 3.4 -- µC Notes: 1. L=30mH, I AS=5.64A, VDD=185V, RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature. TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.11.10 Http://www.silan.com.cn Page 3 of 7 Free Datasheet http://www.datasheet-pdf.com/

SVD7N65AT/F_Datasheet TYPICAL TEST CIRCUIT VGS 10V Charge 12V 50KΩ 300nF Same Type as DUT DUT VGS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.11.10 Http://www.silan.com.cn Page 5 of 7 3mA VDS Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS

2 BVDSS

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SVD7N65AT/F_Datasheet PACKAGE OUTLINE TO-220-3L UNIT: mm TO-220F-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.11.10 Http://www.silan.com.cn Page 6 of 7 Free Datasheet http://www.datasheet-pdf.com/

SVD7N65AT/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.11.10 Http://www.silan.com.cn Page 7 of 7 Disclaimer:

• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers! ATTACHMENT

Revision History

2010.09.14 1.0 Original 2010.11.10 1.1 Modify the template of datasheet; “TYPICAL CHARACTERISTICS” Free Datasheet http://www.datasheet-pdf.com/