SVD640D

SVD640F SILAN | Alldatasheet

Document overview

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Technical content

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N -channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC -DC powe r suppliers, DC -DC converters and H-bridge PWM motor drivers.

FEATURES

 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability

ORDERING INFORMATION

Part No. Package Marking Material Packing SVD640T TO-220-3L SVD640T Pb free Tube SVD640D TO-252-2L SVD640D Halogen free Tube SVD640DTR TO-252-2L SVD640D Halogen free Tape & Reel SVD640F TO-220F-3L SVD640F Pb free Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Symbol Ratings Unit SVD640T SVD640D SVD640F Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current TC=25°C ID A TC=100°C 11 Drain Pulsed Current IDM 72 A Power Dissipation(TC=25°C) -Derate above 25°C PD 150 110 35 W 1.2 0.88 0.28 W/°C Single Pulsed Avalanche Energy (Note 1) EAS 635 MJ Operation Junction Temperature Range TJ 150 °C Storage Temperature Range Tstg -65～+150 °C HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 1 of 8

Microelectronics SVD640T/D/F_Datasheet THERMAL CHARACTERISTICS Characteristics Symbol Typ. Unit SVD640T SVD640D SVD640F Thermal Resistance, Junction-to-Case RθJC 0.83 1.14 3.57 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.0 62.5 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 200 -- -- V Drain-Source Leakage Current IDSS VDS=200V, VGS=0V -- -- 1 µA VDS=200V,VGS=0V,TC=125°C -- -- 1.0 Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 3.0 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=9A -- 0.12 0.15 Ω Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHZ -- 1108 -- pF Output Capacitance Coss -- 160 -- Reverse Transfer Capacitance Crss -- 34 -- Turn-on Delay Time td(on) VDD=100V, VGS=10V, RG=2.5Ω, ID=11A -- 15 -- ns Turn-on Rise Time tr -- 47 -- Turn-off Delay Time td(off) -- 110 -- Turn-off Fall Time tf -- 36 -- Total Gate Charge Qg VDD=160V, VGS=10V, ID=11A -- 41 -- nC Gate-Source Charge Qgs -- 6.0 -- Gate-Drain Charge Qgd -- 20 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse p-n Junction Diode in the MOSFET -- -- 18 A Pulsed Source Current ISM -- -- 72 Diode Forward Voltage VSD IS=11A,VGS=0V -- -- 1.5 V Reverse Recovery Time Trr VDD=50V, di/dt=100A/μS, IF=11A (Note 2) -- 160 -- ns Reverse Recovery Charge Qrr -- 0.98 -- µC Notes: 1. L=30mH,IAS=5.0A,VDD=100V, RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 2 of 8

Microelectronics SVD640T/D/F_Datasheet TYPICAL TEST CIRCUIT 12V 50KΩ 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS

2 BVDSS

HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 5 of 8

Microelectronics SVD640T/D/F_Datasheet PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 2.40 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 TO-252-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E e H L 2.10 2.30 2.50 0 --- 0.127 0.66 0.76 0.89 5.10 5.33 5.46 0.45 --- 0.65 0.45 --- 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 6 of 8

Microelectronics SVD640T/D/F_Datasheet TO-220F-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.900.70 0.80 1.47 0.650.35 0.50 16.2515.25 15.87 16.3015.30 15.75 10.309.30 9.80 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 3.50/ / 3.403.00 3.18 3.553.05 3.30 Disclaimer :

• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malf unction or failure of such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers! HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 7 of 8

Microelectronics SVD640T/D/F_Datasheet Part No.: SVD640T/D/F Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.1 Author: Yin Zi Revision History: 1. Modify the package information of TO-220F-3L 2. Modify the package information of TO-252-2L 3. Modify the package information of TO-220-3L Rev.: 1.0 Author: Yin Zi Revision History: 1. First release HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 8 of 8