SVD540T SILAN | Alldatasheet
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SVD540T/D/K/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.6 http: //www.silan.com.cn Page 1 of 8
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing SVD540T TO-220-3L SVD540T Pb free Tube SVD540DTR TO-252-2L SVD540D Halogen free Tape & Reel SVD540K TO-262-3L SVD540K Halogen free Tube SVD540F TO-220F-3L SVD540F Pb free Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Rating Unit SVD540T SVD540D SVD540K SVD540F Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current TC=25°C ID A TC=100°C 23 Drain Current Pulsed IDM 110 A Power Dissipation(TC=25C) -Derate above 25C PD 130 98 120 33 W 1.04 0.78 0.96 0.27 W/C Single Pulsed Avalanche Energy(Note 1) EAS 695.22 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C 33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD540T/D/K/F is an N -channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary new type of flat low-voltage structure VDMOS technology . The improved process and ce ll structure have been especially tailored to minimize on -state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS.
FEATURES
33A,100V,RDS(on)(typ.)=34m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability TO-220-3L 1.Gate 2.Drain 3.Source 12 3 TO-252-2L TO-262-3L 1 2 3 TO-220F-3L 1 2 3
SVD540T/D/K/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.6 http: //www.silan.com.cn Page 2 of 8 THERMAL CHARACTERISTICS Characteristics Symbol Rating Unit SVD540T SVD540D SVD540K SVD540F Thermal Resistance, Junction-to-Case RθJC 0.96 1.28 1.04 3.77 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.0 62.5 62.5 C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 100 -- -- V Drain-Source Leakage Current IDSS VDS=Rated BVDSS, VGS=0V -- -- 25 µA VDS=0.8 x Rated BVDSS, VGS=0V,TC=125°C -- -- 250 Gate-Source Leakage Current IGSS VGS=±20V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µ A 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=16A -- 34 44 m Gate Resistance Rg f=1.0MHz -- 3.4 -- Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz -- 1239 -- pF Output Capacitance Coss -- 247 -- Reverse Transfer Capacitance Crss -- 44 -- Turn-on Delay Time td(on) VDD=50V, ID=16A, RGS=5.1, VGS=10V -- 10 -- ns Turn-on Rise Time tr -- 44 -- Turn-off Delay Time td(off) -- 46 -- Turn-off Fall Time tf -- 13 -- Total Gate Charge Qg VDS=80V, ID=16A, VGS=10V -- 37 -- nC Gate-Source Charge Qgs -- 6.0 -- Gate-Drain Charge Qgd -- 17 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 33 A Pulsed Source Current ISM -- -- 110 Diode Forward Voltage VSD IS=16A, VGS=0V -- -- 1.2 V Reverse Recovery Time Trr IS=33A, VGS=0V dIF/dt=100A/µs(Note 2) -- 98 -- ns Reverse Recovery Charge Qrr -- 0.4 -- nC Notes: 1. L=1.5mH, IAS=22.5A, RG=25Ω, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
Figure 7. On-resistance Variation Figure 9. Maximum Drain Current vs.
0.5 Notes:
SVD540T/D/K/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.6 http: //www.silan.com.cn Page 5 of 8 TYPICAL TEST CIRCUIT 12V 50KΩ 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS
2 BVDSS
SVD540T/D/K/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.6 http: //www.silan.com.cn Page 6 of 8 PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 TO-252-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E e H L 2.10 2.30 2.50 0 --- 0.127 0.66 0.76 0.89 5.10 5.33 5.46 0.45 --- 0.65 0.45 --- 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF
SVD540T/D/K/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.6 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE TO-262-3L UNIT: mm SYMBOL MIN NOM MAX A b c D E e L 4.30 4.50 4.70 2.20 2.92 0.71 0.90 1.20 --- 1.50 0.34 --- 0.65 8.38 9.30 9.80 10.16 10.54
2.54 BSC
c2 1.22 1.30 1.35 12.80 14.10 1.12 1.42 --- --- A c 0.80 --- --- D e L e b E Ll TO-220F-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.900.70 0.80 1.47 0.650.35 0.50 16.2515.25 15.87 16.3015.30 15.75 10.309.30 9.80 10.369.73 10.16 2.54BSC 7.006.40 6.68 13.4812.48 12.98 3.50/ / 3.403.00 3.18 3.553.05 3.30
SVD540T/D/K/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.6 http: //www.silan.com.cn Page 8 of 8 Disclaimer : Part No.: SVD540T/D/K/F Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.6 Revision History: 1. Add the package information of TO-220F-3L Rev.: 1.5 Revision History: 1. Modify the package information of TO-252-2L 2. Modify the package information of TO-220-3L Rev.: 1.4 Revision History: 1. Modify the thermal characteristics Rev.: 1.3 Revision History: 1. Add the package of TO-262-3L Rev.: 1.2 Revision History: 1. Add the package of TO-252-2L Rev.: 1.1 Revision History: 1. Change the schematic diagram of MOS Rev.: 1.0 Revision History: 1. First Release Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!