SVD3205T SILAN | Alldatasheet
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Technical content
SVD3205T(F)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.1 http: //www.silan.com.cn Page 1 of 8 110A, 55V N-CHANNEL MOSFET
DESCRIPTION
SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology . The improved process and cell structure have bee n especially tailored to minimize on -state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS.
FEATURES
110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-263-2L TO-220-3L 123 TO-220F-3L
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVD3205T TO-220-3L SVD3205T Pb free Tube SVD3205F TO-220F-3L SVD3205F Pb free Tube SVD3205S TO-263-2L SVD3205S Halogen free Tube SVD3205STR TO-263-2L SVD3205S Halogen free Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C ) Characteristics Symbol Ratings Unit SVD3205T SVD3205F SVD3205S Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Drain Current TC=25° C ID 110 A TC=100°C 70 Drain Pulsed Current IDM 390 A Power Dissipation (TC=25C) -Derate above 25C PD 200 58 190 W 1.6 0.46 1.52 W/C Single Pulsed Avalanche Energy (Note 1) EAS 909 MJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C
SVD3205T(F)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.1 http: //www.silan.com.cn Page 2 of 8 THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVD3205T SVD3205F SVD3205S Thermal Resistance, Junction-to-Case RθJC 0.63 2.16 0.66 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 62.5 C/W ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C ) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 55 -- -- V Drain-Source Leakage Current IDSS VDS=55V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µ A 2.0 -- 3.5 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=62A -- 7.5 8.0 m Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz -- 2365 -- pF Output Capacitance Coss -- 740 -- Reverse Transfer Capacitance Crss -- 169 -- Turn-on Delay Time td(on) VDD=28V, VGS=10V, ID=62A (Notes 2,3) -- 28 -- ns Turn-on Rise Time tr -- 110 -- Turn-off Delay Time td(off) -- 159 -- Turn-off Fall Time tf -- 138 -- Total Gate Charge Qg VDS=44V, VGS=10V, ID=62A (Notes 2,3) -- 67 -- nC Gate-Source Charge Qgs -- 13 -- Gate-Drain Charge Qgd -- 35 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse p-n Junction Diode in the MOSFET -- -- 110 A Pulsed Source Current ISM -- -- 390 Diode Forward Voltage VSD IS=110A, VGS=0V -- -- 1.3 V Reverse Recovery Time Trr IS=110A, VGS=0V di/dt=100A/μs (Note 2) -- 67 -- ns Reverse Recovery Charge Qrr -- 0.17 -- µC Notes: 1. L=0.30mH, IAS=63A, VDD=28V, RG=25, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVD3205T(F)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.1 http: //www.silan.com.cn Page 5 of 8 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVD3205T(F)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.1 http: //www.silan.com.cn Page 6 of 8 PACKAGE OUTLINE TO-220-3L UNIT: mm A b c D E L e A2 Q P 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 MAX SYMBOL MIN NOM MILLIMETER A b c D E L e Q P TO-220F-3L UNIT: mm A b c D E L e A3 Q P 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.900.70 0.80 1.47 0.650.35 0.50 16.2515.25 15.87 16.3015.30 15.75 10.309.30 9.80 10.369.73 10.16 2.54BSC 7.006.40 6.68 13.4812.48 12.98 3.50 3.403.00 3.18 3.553.05 3.30 MAXSYMBOL MIN NOM MILLIMETER A b c D E L e Q P
SVD3205T(F)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.1 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE (CONTINUED) TO-263-2L UNIT: mm H L A c E L1D b1 b e e A b c D E L 4.30 4.57 4.72 0.71 0.81 0.91 0.30 0.60 8.50 9.35 9.80 10.45 2.00 2.30 2.74 1.75 1.12 1.27 1.42 H 14.70 15.75 c2 1.17 1.27 1.37 e 2.54BSC 0 0.10 0.25 MAX SYMBOL MIN NOM MILLIMETER __ __ b1 1.17 — 1.50 Important notice : 1. The instructions are subject to change without notice！ 2. Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and curre nt. Please read the instructions carefully before using our products , including the circuit operation precautions. 3. Our products are consumer electronic products or the other civil electronic products. 4. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain pos sibility of failure or malfunction of any semiconductor product under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufactu ring, so as to avoid potential failure risk that may cause personal injury or property loss. 5. It is strongly recommended to identify the trademark when buying our products. Please contact us if there is any question. 6. Product promotion is endless, our company will wholeheartedly provide customers with better products! 7. Website: http: //www.silan.com.cn
SVD3205T(F)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.1 http: //www.silan.com.cn Page 8 of 8 Part No.: SVD3205T(F)(S) Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 2.1 Revision History: 1. Update turn-on/off time Rev.: 2.0 Revision History: 1. Update electrical diagram and typical circuit diagram 2. Update curve template and important notice Rev.: 1.9 Revision History: 1. Modify the ID condition.of Fig 8 2. Update the package outline of TO-220-3L, TO-220F-3L and TO-263-2L Rev.: 1.8 Revision History: 1. Modify the test condition Rev.: 1.7 Revision History: 1. Modify the package outline of TO-263-2L Rev.: 1.6 Revision History: 1. Modify the package information of TO-220F-3L and TO-220-3L Rev.: 1.5 Revision History: 1. Modify the thermal characteristics Rev.: 1.4 Revision History: 1. Modify the electrical characteristics Rev.: 1.3 Revision History: 1. Add the typical test circuit Rev.: 1.2 Revision History: 1. Add the package of TO-220F-3L and TO-263-2L Rev.: 1.1 Revision History: 1. Change the schematic diagram of MOS Rev.: 1.0 Revision History: 1. Initial release