SVD2N70F

SVD2N70M SILAN | Alldatasheet

Document overview

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Technical content

SVD2N70M/F/T_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES

∗ 2A,700V, R DS(on) (typ)=5.5Ω@VGS=10V ∗ Low gate charge ∗ Low C rss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE

ORDERING INFORMATION

Package Marking Material Packing Part No. SVD2N70M TO-251-3L SVD2N70M Pb free Tube SVD2N70F TO-220F-3L SVD2N70F Pb free Tube SVD2N70T TO-220-3L SVD2N70T Pb free Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 1 of 9

SVD2N70M/F/T_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 2 of 9 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Rating Characteristics Symbol SVD2N70M SVD2N70F SVD2N70T Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Drain Current ID 2.0 A Drain Current Pulsed IDM 8.0 A 34 23 44 W Power Dissipation(TC=25°C) -Derate above 25°C PD Single Pulsed Avalanche Energy (Note 1) EAS 89 mJ Operation Junction Temperature Range TJ -55～+150 °C Storage Temperature Range Tstg -55～+150 °C THERMAL CHARACTERISTICS Rating Characteristics Symbol SVD2N70M SVD2N70F SVD2N70T Unit Thermal Resistance, Junction-to-Case RθJC 3.70 5.56 2.86 °C/W Thermal Resistance, Junction-to-Ambient RθJA 110 120 62.5 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 700 -- -- V Drain-Source Leakage Current IDSS VDS=700V, VGS=0V -- -- 10 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=1.0A -- 5.5 6.5 Ω Input Capacitance Ciss -- 310 -- Output Capacitance Coss -- 56 -- Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHZ -- 3.2 -- pF Turn-on Delay Time td(on) -- 8.53 -- Turn-on Rise Time tr -- 15.20 -- Turn-off Delay Time td(off) -- 24.93 -- Turn-off Fall Time tf VDD=350V, ID=2.0A, RG=25Ω ns Total Gate Charge Qg -- 8.81 -- Gate-Source Charge Qgs -- 1.67 -- Gate-Drain Charge Qgd VDS=560V, ID=2.0A, VGS=10V nC

SVD2N70M/F/T_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 3 of 9 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS -- -- 2.0 Pulsed Source Current ISM Integral Reverse P-N Junction Diode in the MOSFET -- -- 8.0 A Diode Forward Voltage VSD IS=2.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr -- 260 -- ns Reverse Recovery Charge Qrr IS=2.0A,VGS=0V, dIF/dt=100A/µS(Note 2) -- 1.09 -- µC Notes: 1. L=30 mH, I AS=2.25A, VDD=65V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.

SVD2N70M/F/T_Datasheet TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 4 of 9

SVD2N70M/F/T_Datasheet TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 5 of 9

SVD2N70M/F/T_Datasheet TYPICAL TEST CIRCUIT VGS 10V Charge 12V 50KΩ 300nF Same Type as DUT DUT VGS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 6 of 9 3mA VDS Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS

2 BVDSS

SVD2N70M/F/T_Datasheet PACKAGE OUTLINE (continued) TO-220F-3L(One) UNIT: mm TO-220F-3L(Two) UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 7 of 9

SVD2N70M/F/T_Datasheet PACKAGE OUTLINE (Continued) TO-220-3L UNIT: mm TO-251-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 8 of 9

SVD2N70M/F/T_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2011.03.03 Http://www.silan.com.cn Page 9 of 9 Disclaimer:

• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers! ATTACHMENT

Revision History

2010.11.11 1.0 Original 2011.03.03 1.1 Modify “ELECTRICAL CHARACTERISTICS”, “PACKAGE OUTLINE”