SVD2N60T SILAN | Alldatasheet
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HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2009.07.09 Http://www.silan.com.cn Page 1 of 6 ORDERING SPECIFICATIONS Part No. Package Marking Shipping SVD2N60T TO2203L SVD2N60T 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Symbol Value Unit DrainSource Voltage VDS 600 V GateSource Voltage VGS ±30 V Drain Current ID 2.0 A Drain Current Pulsed IDM 8 A
44 WPower Dissipation(TC=25°C)
Derate above 25°C PD
0.22 W/°C
Single Pulsed Avalanche Energy (Note 1) EAS 120 mJ Repetitive Avalanche Energy EAR 5.4 mJ Operation Junction Temperature TJ 55̚+150 °C Storage Temperature Tstg 55̚+150 °C 2A, 600V NChannel MOSFET GENERAL DESCRIPTION SVD2N60T is an Nchannel enhancement mode power MOSfield effect transistor which is produced using Silan proprietary S RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in ACDC power suppliers, DCDC converters and Hbridge PWM motor drivers.
FEATURES
∗ 2A,600V,R DS(on)(typ.)=4.0Ω @VGS=10V ∗ Low gate charge ∗ Low C rss ∗ Fast switching ∗ Im proved dv/dt capability 1.Gate 2.Drain 3.Source TO2203L 2 31
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2009.07.09 Http://www.silan.com.cn Page 2 of 6 THERMAL CHARACTERISTICS Parameter Symbol Value Unit Therm al Resistance, JunctiontoCase RșJC 2.87 °C/W Therm al Resistance, JunctiontoAmbient RșJA 100 °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 V DrainSource Leakage Current IDSS VDS=600V, VGS=0V 1.0 µA GateSource Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V GS= VDS, ID=250µA 2.0 4.0 V Static Drain Source On State Resistance RDS(on) V GS=10V, ID=1.0A 4.0 4.6 Ω Input Capacitance Ciss 320 380 Output Capacitance Coss 30 45 Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1.0MHZ 3 5.6 pF Turnon Delay Time td(on) 13 30 Turnon Rise Time tr 12 60 Turnoff Delay Time td(off) 73 100 Turnoff Fall Time tf VDD=300V,ID=2.0A, RG=25Ω ns Total Gate Charge Qg 9.3 13 GateSource Charge Qgs 2.0 GateDrain Charge Qgd VDS=480V,ID=2.0A, VGS=10V nC SOURCEDRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max Unit Continuous Source Current IS 2 Pulsed Source Current ISM Integral Reverse PN Junction Diode in the MOSFET 8.0 A Diode Forward Voltage VSD IS=2.0A,VGS=0V 1.4 V Reverse Recovery Time Trr 230 ns Reverse Recovery Charge Qrr IS=2.0A,VGS=0V, dIF/dt=100A/µS 1.0 µC Notes: 1. L=56mH, I AS=2.0A,VDD=50V,RG=25Ω ,starting TJ=25°C; 2. Pulse Test: Pulse width 300ȝs,Duty cycle2%; 3. Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2009.07.09 Http://www.silan.com.cn Page 4 of 6 TYPICAL CHARACTERISTICS (continued) Capasistance [pF] VGS GateSource Voltage [V] BVDSS(Normalized) DrainSource Breakdown Voltage RDS(ON) (Normalized) DrainSource OnResistance
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2009.07.09 Http://www.silan.com.cn Page 5 of 6 TYPICAL TEST CIRCUIT
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2009.07.09 Http://www.silan.com.cn Page 6 of 6 PACKAGE OUTLINE TO2203L(One) UNIT: mm TO2203L˄Two˅ UNIT: mm 6.10~6.80 13.1±0.5 15.1~15.9 3.95MAX