SVD13N50F

SVD13N50T SILAN | Alldatasheet

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Technical content

SVD13N50T/F_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES

∗ 13A,500V,R DS(on)(typ)=0.36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. Package Marking Material Packing SVD13N50T TO-220-3L SVD13N50T Pb free Tube SVD13N50F TO-220F-3L SVD13N50F Pb free Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Rating Parameter Symbol SVD13N50T SVD13N50F Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Drain Current ID 13 A Power Dissipation(TC=25°C) PD 180 51 W Single Pulsed Avalanche Energy (Note 1) EAS 1446 mJ Operation Junction Temperature TJ 150 °C Storage Temperature Tstg -55～+150 °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Http://www.silan.com.cn Page 1 of 8

SVD13N50T/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Http://www.silan.com.cn Page 2 of 8 THERMAL CHARACTERISTICS Rating Parameter Symbol SVD13N50T SVD13N50F Unit Thermal Resistance, Junction-to-Case RθJC 1.25 5 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 120 °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 500 -- -- V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 1 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=6.5A -- 0.36 0.52 Ω Input Capacitance Ciss -- 1838 -- Output Capacitance Coss -- 194 -- Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1.0MHZ -- 10.6 -- pF Turn-on Delay Time td(on) -- 52 -- Turn-on Rise Time tr -- 40 -- Turn-off Delay Time td(off) -- 352 -- Turn-off Fall Time tf VDD=250V,ID=6.5A, RG=4.7Ω, VGS=10V ns Total Gate Charge Qg -- 53.18 -- Gate-Source Charge Qgs -- 11.08 -- Gate-Drain Charge Qgd VDS=400V,ID=13A, VGS=10V nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS -- -- 13 Pulsed Source Current ISM Integral Reverse p-n Junction Diode in the MOSFET -- -- 52 A Diode Forward Voltage VSD IS=13A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr -- 450 -- ns Reverse Recovery Charge Qrr IS=13A,VGS=0V, dIF/dt=100A/µS (Note 2) -- 5.0 -- µC Notes: 1. L=30mH, I AS=7.725A, VDD=250V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.

SVD13N50T/F_Datasheet TYPICAL TEST CIRCUIT HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Http://www.silan.com.cn Page 5 of 8 200nF VGS 10V Charge 12V 50KΩ 300nF VGS 3mA VDS Qg Qgs Qgd VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS

2 BVDSS

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform DUT DUT DUT BVDSS VDD

SVD13N50T/F_Datasheet PACKAGE OUTLINE TO-220-3L UNIT: mm TO-220F-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Http://www.silan.com.cn Page 6 of 8

SVD13N50T/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Http://www.silan.com.cn Page 7 of 8 Disclaimer:

• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers!

SVD13N50T/F_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Http://www.silan.com.cn Page 8 of 8 ATTACHMENT

Revision History

2010.05.14 1.0 Original 2010.10.21 1.1 Modify” ORDERING SPECIFICATIONS”, the parameters, the template of Datasheet