SVD1055SA

SVD1055SA SILAN | Alldatasheet

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MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of ORDERING INFORMATION P art N Package M arking Hazardous substance control P acking SVD1055SA SOP 225 1.27 SVD1055SA Halogen free Tube SVD1055SATR SOP 225 .27 SVD1055SA Halogen free Tape & Reel ABSOLUTE MAXIMUM RATINGS C =25 C unless otherwise noted) Characteristics Symbol R ating Unit N ch P ch Drain Source Voltage V DS V Gate Source Voltage V GS V Drain Current T C =25 I D A T C =100 8.5 Drain Current Pulsed I DM A Power Dissipation C =25 C P D 2.0 W Single Pulsed Avalanche Energy(Note 1) E AS 122 106 mJ Operation Junction Temperature Range T J +150 C Storage Temperature R a nge T stg +150 C A V N CHANNEL MOSFET GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N channel and a P channel enhancement mode MOS FET, which is produced using Silan proprietary low voltage planar VDMOS process. The improved process and cel l structure have been especially tailored to minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It's widely used in electronic ballasts and low power SMPS

FEATURES

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of ELECTRICAL CHARACTERISTICS T C =25 C unless otherwise noted) N channel Characteristics Symbol Test conditions Min Typ Max Unit Drain S ource B reakdown V oltage B V DSS V GS =0V I D =250µA V Drain Source Leakage Current I DSS V DS V V GS =0V µA Gate S our ce L eak age C urrent I GSS V GS =±20V V DS =0V nA Gate Threshold V oltage V GS(th) V GS = V DS I D =250µA 4.0 V Static Drain S ource O n S tate R esistance R DS(on) V GS =10V I D A m Input Capacitance C iss V DS =25V V GS =0V f=1.0MHz 386 pF Output Capacitance C oss 147 Reverse Transfer Capacitance C rss Turn on Del ay Time t d(on) V DD =28V V GS =10V R G =25 Ω I D =10A Note 5.2 ns Turn on Rise Time t r Turn off Delay Time t d(off) Turn off Fall Time t f Total Gate Charge Q g V DD =44V V GS =10 V I D =10A Note nC Gate Source Charge Q gs 2.9 Gate Drain Charge Q gd 3.8 Continuous Source Current I S Integral Reverse P N Junction Diode in the MOSFET A Pulsed Source Current I SM D iode Forward Voltage V SD I S A V GS =0V 1.3 V Reverse Recovery Time T rr I S A V GS =0V dI F /dt=100A/ µ s (Note ns Reverse Recovery Charge Q rr μc Notes: H I AS A V DD =25V R G Ω starting temperature T J =25 Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; Essentially independent of operating temperature.

MICROELECTRONICS CO.,L TD Rev.: 1.2 http //www.silan.com.cn Page of

ELECTRICAL CHARACTERISTICS

C =25 C unless otherwise noted) P channel Characteristics Symbol Test conditions Min Typ Max Unit Drain S ource B reakdown V oltage B V DSS V GS =0V I D 250µA V Drain Source Leakage Current I DSS V DS V V GS =0V µA Gate S ource L eak age C urrent I GSS V GS =±20V V DS =0V nA Gate Threshold V oltage V GS(th) V GS = V DS I D 250µA 4.0 V Static Drain S ource O n S tate R esistance R DS(on) V GS 10V I D 7.2 A 145 175 m Input Capacitance C iss V DS 25V V GS =0V f=1.0MHz 461 pF Output Capacitance C oss 144 Reverse Transfer Capacita nce C rss Turn on Delay Time t d(on) V DD 28V V GS 10V R G Ω I D 7.2 A Note 8.4 ns Turn on Rise Time t r Turn off Delay Time t d(off) Turn off Fall Time t f Total Gate Charge Q g V DD 44V V GS 10V ID= 7.2 A Note nC Gate Source Charge Q gs 2.8 Gate Drain Charge Q gd 5.8 Continuous Source Current I S Integral Reverse P N Junction Diode in the MOSFET A Pulsed Source Current I SM Diode Forward Voltage V SD I S 7.2 A V GS =0V 1.6 V Reverse Recovery Time T rr I S 7.2A V GS =0V dI F /dt=100A/ µ s (Note 54.33 ns Reverse Recovery Charge Q rr 101 μc Notes: 1.0m H I AS A V DD =25V R G Ω starting temperature T J =25 Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; Essentially independent of operating temperature.

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of TYPICAL CHARACTERISTICS Figure On Region Characteristics N ch Figure Transfer Characteristics N ch D r a i n C u r r e n t I D A 100 100 Drain Source Voltage V DS V D r a i n C u r r e n t I D A Gate Source Voltage V GS V D r a i n S o u r c e O n R e s i s t a n c e R D S o n m Ω Drain Current I D A Figure On Resistance Variation vs Drain Current and Gate Voltage N ch Notes 250 µ S pulse test V DS V C 150 C C 100 V GS V V GS V Notes 250 µ S pulse test T C C V GS V V GS V Note T J C V GS V V GS V V GS V V GS V V GS V V GS V Figure On Region Characteristics P ch D r a i n C u r r e n t I D A 100 100 Drain Source Voltage V DS V Notes 250 µ S pulse test T C C Figure Transfer Characteristics P ch D r a i n C u r r e n t I D A Gate Source Voltage V GS V C C 150 C 100 D r a i n S o u r c e O n R e s i s t a n c e R D S o n m Ω Drain Current I D A Figure On Resistance Variation vs Drain Current and Gate Voltage P ch 100 250 V GS V V GS V 300 200 150 Note T J C V GS V V GS V V GS V V GS V V GS V V GS V V GS V V GS V Notes 250 µ S pulse test V DS V

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of TYPIC AL CHARACTERISTICS (cont inued) R e v e r s e D r a i n C u r r e n t I D R A Source Drain Voltage V SD V Figure Body Diode Forward Voltage Variation vs Source Current and Temperature N ch C C 150 C 100 Notes 250 µ S pulse test V GS V R e v e r s e D r a i n C u r r e n t I D R A Source Drain Voltage V SD V Figure Body Diode Forward Voltage Variation vs Source Current and Temperature P ch C C 150 C 100 Notes 250 µ S pulse test V GS V Figure Capacitance Characteristics N ch Figure Gate Charge Characteristics N ch C a p a c i t a n c e p F 100 Drain Source Voltage V DS V G a t e S o u r c e V o l t a g e V G S V Total Gate Charge Q g nC 100 10000 1000 Figure Capacitance Characteristics P ch C a p a c i t a n c e p F 100 Drain Source Voltage V DS V 100 10000 1000 Figure Gate Charge Characteristics P ch G a t e S o u r c e V o l t a g e V G S V Total Gate Charge Q g nC Note I D A Note I D A Notes V GS V f MHz C iss C gs C gd C ds shorted C oss C ds C gd C rss C gd V DS V V DS V V DS V C iss C oss C rss Notes V GS V f MHz C iss C gs C gd C ds shorted C oss C ds C gd C rss C gd C iss C oss C rss V DS V V DS V V DS V

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of TYPICAL Characteristics (continued) 100 100 200 Junction Temperature T J C Figure Breakdown Voltage Variation vs Temperature N ch Figure On resistance Variation vs Temperature N ch Junction Temperature T J C 150 Notes V GS V I D 250 µ A 100 100 200 150 Notes V GS V I D A 100 100 200 Junction Temperature T J C Figure Breakdown Voltage Variation vs Temperature P ch 150 Notes V GS V I D 250 µ A Figure On resistance Variation vs Temperature P ch Junction Temperature T J C 100 100 200 150 Notes V GS V I D A 100 100 Figure Max Safe Operating Area N ch Drain Source Voltage V DS V DC ms ms 100 µ s µ s Operation in this area is limited by R DS ON 100 100 Figure Max Safe Operating Area P ch Drain Source Voltage V DS V DC ms ms 100 µ s µ s Operation in this area is limited by R DS ON Notes T C C T j 150 C Single Pulse Notes T C C T j 150 C Single Pulse

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of TYPICAL TEST CIRCUIT V K Ω 300 nF Same Type as DUT DUT V GS mA V DS V GS V Charge Qg Qg s Qg d Gate Charge Test Circuit Waveform Resistive Switching Test Circuit Waveform V DS V GS R G R L V DD V V DS V GS td on t on tr td off t off t f Unclamped Inductive Switching Test Circuit Waveform V DS R G V DD V L tp I D BV DSS I AS V DD tp Time V DS t I D t E AS LI AS BV DSS BV DSS V DD DUT DUT 200 nF

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of PACKAGE OUTLINE SOP 225 1.27 UNIT : mm D isclaimer Silan reserve s the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standa rds strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!

MICROELECTRONICS CO.,L TD Rev.: 1.2 http : //www.silan.com.cn Page of Part No.: SVD 1055SA Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.2 Revision History: M odify the electrical characteristics and update Fig 5 and 6 Rev.: 1.1 Revision History: M odify the electrical symbol M odify the general description Rev.: 1.0 Revision History: F irst release