STW12NC60 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh  II MOSFET n TYPICAL R DS (on) = 0.48Ω n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n NEW HIGH VOLTAGE BENCHMARK n GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH  II is the evolution of the first generation of MESH OVERLAY .The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS

n SWITCH MODE POWER SUPPLIES (SMPS) n HIGH CURRENT, HIGH SPEED SWITCHING n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STW12NC60 600V < 0.55 Ω 12 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC =2 5°C 12 A ID Drain Current (continuos) at TC = 100°C 8A IDM (l ) Drain Current (pulsed) 18 A PTOT Total Dissipation at TC =2 5°C 190 W Derating Factor 1.52 W/ °C dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤11A, di/dt≤100A/µ s, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. TO-247 INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 12 A EAS Single Pulse Avalanche Energy (starting Tj=2 5°C, ID =IAR ,V DD =5 0V ) 850 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250µA, VGS =0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125°C 50 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS = 10V, ID =6 A 0.48 0.55 Ω ID(on) On State Drain Current VDS >ID(on)xR DS(on)max, VGS =1 0 V 12 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VDS >ID(on)xR DS(on)max, ID =6A 13 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS =0 2150 pF C oss Output Capacitance 275 pF C rss Reverse Transfer Capacitance 39 pF

Thermal ImpedanceSafe Operating Area ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 300V, ID =6A R G = 4.7Ω ,V GS = 10V (see test circuit, Figure 3) 20 ns tr 15 ns Q g Total Gate Charge VDD = 480V, ID =1 2A , VGS = 10V, RG =4 . 7Ω 65 90 nC Q gs Gate-Source Charge 13 nC Q gd Gate-Drain Charge 28 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID =1 2A , R G = 4.7Ω, VGS =1 0 V (see test circuit, Figure 5) 14 ns tf Fall Time 25 ns tc Cross-over Time 30 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 12 A ISDM (2) Source-drain Current (pulsed) 48 A VSD (1) Forward On Voltage ISD =1 2A ,VGS =0 1.6 V trr Reverse Recovery Time ISD = 12 A, di/dt = 100A/µs, VDD = 100V, Tj= 150°C (see test circuit, Figure 5) 590 ns Q rr Reverse Recovery Charge 5.6 µC IRRM Reverse Recovery Current 19 A

Capacitance VariationsGate Charge vs Gate-source Voltage Static Drain-source On ResistanceTransconductance Transfer CharacteristicsOutput Characteristics

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P TO-247 MECHANICAL DATA

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