STW12N150K5 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-247 package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W Industry’s lowest RDS(on) * area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube TO-247
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current at TC = 25 °C 7 A ID Drain current at TC = 100 °C 4 A IDM (1) Drain current (pulsed) 28 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt(2) Peak diode recovery voltage slope 4.5 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tj Operating junction temperature - 55 to 150 °C Tstg Storage temperature Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 7 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS (3)VDS ≤ 1200 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.5 °C/W Rthj-amb Thermal resistance junction-amb 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Max current during repetitive or single pulse avalanche 2 A EAS Single pulse avalanche energy 900 mJ
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 5: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1500 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1500 V 1 µA VGS = 0 V, VDS = 1500 V, Tc=125 °C 50 µA IGSS Gate body leakage current VDS = 0, VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 3.5 A 1.6 1.9 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0 V, VDS = 100 V, f = 1MHz - 1360 - pF Coss Output capacitance - 80 - pF Crss Reverse transfer capacitance - 0.7 - pF Co(tr) (1) Equivalent capacitance time related VDS = 0 V to 1200 V, VGS = 0 V - 82 - pF Co(er) (2) Equivalent capacitance energy related - 32 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3 - Ω Qg Total gate charge VDD = 1200V, ID = 7 A VGS = 10 V (see Figure 16: "Gate charge test circuit") - 47 - nC Qgs Gate-source charge - 8 - nC Qgd Gate-drain charge - 32 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. (2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS.
Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 750 V, ID = 3.5 A, RG = 4.7 Ω VGS = 10 V (see Figure 18: "Unclamped inductive load test circuit") - 25 - ns tr Rise time - 8 - ns td(off) Turn-off delay time - 90 - ns tf Fall time - 37 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 7 A ISDM Source-drain current (pulsed) 28 A VSD (1) Forward on voltage ISD = 7 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 7 A, VDD = 60 V di/dt = 100 A/µs, (see Figure 17: "Test circuit for inductive load switching and diode recovery times") - 302 ns Qrr Reverse recovery charge - 3.71 µC IRRM Reverse recovery current - 24.6 A trr Reverse recovery time ISD = 7 A,VDD = 60 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 17: "Test circuit for inductive load switching and diode recovery times") - 432 ns Qrr Reverse recovery charge - 4.71 µC IRRM Reverse recovery current - 21.8 A Notes: (1)Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost - effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.
K tp Ƭ Zth= K*R thj-c δ= t p/ƬSingle pulse 0.01 δ=0.5 10 -1 10 -2 10 -3 10 -410 -5 10 -3 10 -2 10 -1 0.2 0.1 0.05 0.02 tp (s) GC18460
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
Figure 14: Maximum avalanche energy vs TJ
3 Test circuits
Figure 15: Switching times test circuit for resistive load Figure 16: Gate charge test circuit Figure 17: Test circuit for inductive load switching and diode recovery times Figure 18: Unclamped inductive load test circuit Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-247 package information
Figure 21: TO-247 package outline
Table 10: TO-247 package mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70
5 Revision history
Table 11: Document revision history Date Revision Changes 11-May-2015 1 First release. 30-Jun-2015 2 Updated title and features in cover page. Updated Section 4: "Electrical ratings", Section 5: "Electrical characteristics". Added Section 5.1: "Electrical characteristics (curves)" . Minor text changes. 07-Jul-2015 3 Updated Section 5.1: "Electrical characteristics (curves)". Minor text changes.