STU3055L SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor T O-252 and T O-251 P ackage. AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted) S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) 25V 12A 70 @ V G S = 10V 95 @ V G S = 4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S G D S T U S E R IE S T O-252AA(D-P AK ) S T D S E R IE S T O-251(l-P AK ) G G S S D D T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C 3 50R J A /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage 16V G S V -P ulsed 12ID A 40IDM A Drain-S ource Diode F orward C urrent 5IS A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -55 to 175 C @ T c=25 C 50 Drain C urrent-C ontinuous @ T J =25 C a Max S T U/D3055L

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 25 V Zero G ate Voltage Drain C urrent IDS S V DS 20V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 16V, V DS 0V= = 100 nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 0.8 V Drain-S ource On-S tate R esistance R DS (ON) V G S 10V, ID 4A 70 V G S 4.5V, ID 3A 95 On-S tate Drain C urrent ID(ON) V DS = 5V, V G S = 4.5V A SF orward Transconductance F Sg V DS 10V, ID 5.0A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =8V, V G S = 0V f =1.0MHZ

240 P F

S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 10V, ID = 1A, V G E N = 4.5V, R L = 10 ohm R G E N = 6 ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =10V, ID = 4A, V G S =10V nC nC nC C F all T ime = = m-ohm m-ohm V DS =10V,ID =4A,V G S =10V V DS =10V,ID =4A,V G S =4.5V nC 1.8 285 97 113 68 80 16.2 19.2 18.4 21 10.1 11.5 23.3 26 3.2 3.5 1.3 1.6 0.8 1 5.9 6.5 1.1

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =5A 1.0 V b C Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Temperature F igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A)C , C apacitance (pF ) On-R esistance ID, Drain C urrent (A) a.S urface Mounted on F R 4 B oard, t 10sec. 0 4 8 12 16 20 24 C iss C oss 500 400 300 200 100 0 1 2 3 4 5 6 25 C 0.0 1 2 3 4 5 6 T j=125 C 2.2 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 125 T j( C ) -25 25 75 V G S =10V ID=4A C rss V G S =2V V G S =4V V G S =4.5V V G S =5V V G S =10V -55 C R DS (ON), Normalized

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 0 3 6 9 12 15 V DS =10V V DS =10V ID=4A T J =25 C 1 1 0.1 0.03 0.1 1 10 20 50 10ms 100ms DC V G S =10V S ingle P uls e T c=25 C -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA S T U/D3055L RDS(ON) Limit

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective S DU/D3055L INV E R T E D 0.1 0.01 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 S ING LE P ULS E V DD R D V V R S V G G S IN G E N OUT L

84 0.94 3 3 4 5 9 3 9 1 6.00 0 36 4 9.70 1 82 398 1.425 1.625 56 0.064 0.650 0.850 6 33 L2 0.600 0.024REF. REF. 2.29 BSC 0.090 BSC S T U/D3055L

UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M N W T H K S G R V ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 S S T U/D3055L " A" TO-251 Tube