STU302S SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect Transistor TO-252 and TO-251 Package. ABSOLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) S amHop Microelectronics Corp. Apr 03,2006 PR ODUCT S UMMAR Y VDSS ID R DS(ON) ( m Ω ) 30V 50 A 9@ V GS =1 0 V 12 @ V GS =4 . 5 V FEA TURES Super high dense cell design for low RDS(ON ). R ugged and reliable. S G D STU SERI ES TO-252AA(D-PAK) STD SERI ES TO-251(l-PAK) G G S S D D THERM AL CHARACTERI STI CS Thermal R esistance, J unction-to-C ase Thermal R esistance, J unction-to-Ambient R JC 3 50R JA /WC /WC Par am et er Sy m b o l Limit Unit Drain-Source Voltage VDS V G a te-S ource Volta ge 20 VGS V -Pulsed ID A IDM A Drain-Source Diode Forward Current 20 IS A Maximum Power Dissipation P D W Operat ing and St orageTemperature R ange TJ ,T STG -55 to 175 C @T c = 2 5C 50 Drain C urrent-C ontinuous @ TC =25 C a Max S TU/D302S 180

Par am et er Sy m b o l Co n d i t i o n Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS =VGS 0V, ID 250uA= 30 V Zero G ate Voltage Drain C urrent IDSS VDS 24V, VGS 0V== 1 Gat e-Bo d y Leakag e IGSS VGS 20V, VDS 0V= = 100 nA ON CHAR ACTER ISTICS a G ate Threshold Voltage VGS(t h ) VDS VGS ,I D = 250uA= 13 V Dra in-S ource O n-S ta te R es is ta nceR DS(ON) VGS 10V, ID 20A VGS 4.5V, ID 10A On-St at e Drain Current ID(ON) VDS = 10V, VGS =1 0 V A SF orward Transconductance FSg VDS 10V, ID 10A DYNAMIC CHARACTERISTICS b Input Capacit ance C IS S C RSS C OSSO utput C a pa cita nce Reverse Transfer Capacit ance VDS =15V, VGS =0 V f= 1 . 0 M HZ P F P F P F S WITCHING CHAR ACTE R IS TICS b Turn-On Delay Time Ri se Ti m e Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = 15V ID =1A VGS = 10V R GEN =6o h m ns ns ns ns Total Gate C harge G ate-S ource C harge Gat e-Dr ai n Ch ar g e Qg Qgs Qgd VDS =15V, ID = 20A VGS =10V nC nC nC C Fal l Ti m e uA mo h m mo h m VDS =15V, ID =20A,V GS =10V nC VDS =15V, ID =20A,V GS =4.5V 225 325 1020 8.2 2.3 ohmRgGat e r esi st an ce VGS =0V, VDS = 0V, f=1.0MHZ 0.25 ELECTRI CAL CHARACTERI STI CS ( T C =25 C unless otherwise noted) S TU/D302S 1.7

F igure 6. B reakdown Voltage Variation with T emperature Vt h, Normal i zed G ate-S ource Threshold Voltage BV DS S, Normalized Drain-S ource B reakdown VoltageIs, S ource-drain current (A) Fi g u r e 8. Bo d y Di o d e Fo r w ar d Vo l t ag e Variation with S ource C urrent V SD , B ody Diode F orward Voltage (V) Tj, J unction Temperature ( C ) Tj , Junct i on Tem p erat ure ( C) 20.0 10.0 1.0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V GS ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA VGS ,G a t e -S o u r c eV o l t a g e( V ) R DS (on) (m Ω) F igure 7. On-R es is tance vs .G ate-S ource Voltage 24 68 100 F igure 5. G ate Threshold Variation with T emperature 25 C 125 C

25 C75 C

ID=20A 75 C S TU/D302S

Figure 10. Gate Charge

F igure 13. S witching T es t C ircuit F igure 14. S witching W aveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% PULSE WIDTH INVE R TE D V DD R D V V R S V G GS IN GEN OUT L Transient Thermal Impedance Sq u a r e Wa v e Pu l se D u r a t i o n ( se c ) F igure 15. Normalized T hermal T rans ient Impedance C urve r(t),Normalized E ffective 0.1 0.01 11 0 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R įJA (t )=r (t ) * RįJA 2. R įJA =S ee Dat asheet 3. TJM -T A =P DM*R įJA (t ) 4. Dut y Cycle, D=t1/t2 SINGLE PULSE S TU/ D302S

84 0.94 3 3 4 5 9 3 9 1 6.00 0 36 4 9.70 1 82 398 1.425 1.625 56 0.064 0.650 0.850 63 3 L2 0.600 0.024REF. REF. 2.29 BSC 0.090 BSC S TU/D302S

UNIT:р PACKAGE TO-252 (16 р* A0 B0 K0 D0 D1 EE 1E 2 P0 P1 P2 T 6.80 ²0.1 10.3 ²0.1 2.50 ²0.1 ӿ2 ӿ1.5 + 0.1 16.0 0.3² 1.75 0.1² 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M N W T H K S G R V ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 2.2 ӿ13.0 +0 . 5 - 0.2 10.6 2.0 ²0.5 S "A " TO-251 Tube S TU/D302S