STU20N03L

STU20N03L SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor T O-252 and T O-251 P ackage. AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted) S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) 30V 28A 23 @ V G S = 10V 39 @ V G S = 4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S G D S T U S E R IE S T O-252AA(D-P AK ) S T D S E R IE S T O-251(l-P AK ) G G S S D D T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C 3 50R J A /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage 20V G S V -P ulsed 28ID A 70IDM A Drain-S ource Diode F orward C urrent 20IS A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -55 to 175 C @ T c=25 C 50 Drain C urrent-C ontinuous @ T J =125 C a Max S T U/D20N03L

ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 30 V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 20V, VDS = 0V nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA 1 1.5 2.5 V Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =20A VGS = 4.5V, ID = 10A On-State Drain Current ID(ON) VDS = 10V, VGS = 10V A SForward Transconductance FSg VDS = 10V, ID = 20A DYNAMIC CHARACTERISTICS b Input Capacitance CISS CRSS COSSOutput Capacitance Reverse Transfer Capacitance VDs =25V, VGS = 0V f = 1.0MHZ PF PF PF SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) t tD(OFF) tFall time VDD = 15V ID =1A VGS = 10V R L = 15 ohmRGEN = 11 ohm ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDD = 15V, ID = 1A RL=15 ohm nC nC nC 100 m ohm m ohm nC VDD = 15V,ID = 1A,VGS =10V VDS = 15V,ID = 1A,VGS =4.5V 614 15.2 4.5 23.3 12.7 17.8 8.8 2.8

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is = 20A 1.3 V a Notes b.G uaranteed by design, not subject to production testing. a.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) C , C apacitance (pF ) Drain-S ource, On-R esistance ID, Drain C urrent (A) ID, Drain C urrent (A) R DS (ON), Normalized S T U/D20N03L 0 5 10 15 20 25 30 900 750 600 450 300 150 0 2 4 6 8 10 12 -55 C 25 C 0 1 1.5 2 2.5 3 3.5 T j=125 C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 125 V G S =1.5V C iss C oss C rss V G S =2.5V T j( C ) 10050 75 V G S =10V ID=20A T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 20.0 10.0 0.1 1.0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 0 5 10 15 20 V DS =10V 0 3 6 9 12 15 18 21 24 V DS =15V ID=1A 100 0.5 0.1 1 10 30 60 V G S =10V S ingle P uls e T c=25 C RDS(ON) Limit DC 100ms 10ms 1ms

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective S T U/D20N03L INV E R T E D 0.1 0.01 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 S ING LE P ULS E V DD R D V V R S V G G S IN G E N OUT L

84 0.94 3 3 4 5 9 3 9 1 6.00 0 36 4 9.70 1 82 398 1.425 1.625 56 0.064 0.650 0.850 6 33 L2 0.600 0.024REF. REF. 2.29 BSC 0.090 BSC S T U/D20N03L

UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M N W T H K S G R V ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 S S T U/D20N03L " A" TO-251 Tube