STS17NF3LL

STS17NF3LL STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 30V - 0.0045 Ω - 17A SO-8 STripFET™ II MOSFET FOR DC-DC CONVERSION ■ TYPICAL R DS (on) = 0.0045 Ω @ 10V ■ OPTIMAL R DS (on) x Qg TRADE-OFF @ 4.5V ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC converters for Telecom and computer industries.

APPLICATIONS

■ DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE ■ SYNCHRONOUS RECTIFIER TYPE VDSS R DS(on) ID STS17NF3LL 30 V <0.0055 Ω 17 A SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 30 V VGS Gate- source Voltage ± 18 V ID Drain Current (continuous) at TC = 25°C 17 A ID Drain Current (continuous) at TC = 100°C 12 A IDM (•) Drain Current (pulsed) 68 A Ptot Total Dissipation at TC = 25°C 3.2 W

(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t /c91/c32 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb Rthj-lead Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Operating Junction Temperature Storage Temperature Max Max -55 to 175 -55 to 175 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 18 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 1V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 8.5 A VGS = 4.5 V I D = 8.5 A 0.0045 0.0055 0.0055 0.007 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 10 V I D = 8.5 A 37 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, VGS = 0 2160 614 pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V I D = 8.5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 1) 23.5 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =24V ID =12.5A VGS =4.5 V (see test circuit, Figure 2) 35 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 15 V I D = 8.5 A R G = 4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3) 47.5 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A VSD (*) Forward On Voltage ISD = 17 A V GS = 0 1.2 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A di/dt = 100A/µs VDD = 15 V T j = 150°C (see test circuit, Figure 3) 2.3 ns nC A ELECTRICAL CHARACTERISTICS (continued) Thermal Impedance

Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

. . Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . .

Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour Fig. 1: Switching Times Test Circuits For Resistive Load

DIM. mm inch A1 . 7 5 0 . 0 6 8 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e1 . 2 7 0 . 0 5 0 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M0 . 6 0 . 0 2 3 S 8 (max.) 0016023 SO-8 MECHANICAL DATA

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