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S mHop Microelectronics C orp.a Symbol VDS VGS IDM 1.5 62.5 W A PD 100 -55 to 175 ID UnitsParameter 159 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 75V 54A 15 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. STB SERI ES TO-263(DD-PAK) G S D STP SERI ES TO-220 S D G S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) Limit Drain Current-Continuous c TC=25°C -Pulsed a c A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA www.samhop.com.tw Jun,08,2015 Details are subject to change without notice. A45TC=70°C TC=70°C 70 W STB820S STP820S Green Product Ver 1.0 18 @ VGS=4.5V EAS mJSingle Pulse Avalanche Energy d 121
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 1.0 V VGS=4.5V , ID=25A 18 24 m ohm gFS 48 S VSD CISS 1152 pF COSS 182 pF CRSS 122 pF Qg nC nCQgs nCQgd tD(ON) 18.5 ns tr 1.8 ns tD(OFF) 6.5 ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=37.5V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=37.5V,ID=26A,VGS=10V Fall Time Turn-On DelayTime m ohm VGS=10V , ID=27A VDS=10V , ID=27A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=60V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 3.0 b f=1.0MHz b VDS=37.5V,ID=26A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=6A 0.77 1.3 V www.samhop.com.tw2 1.8 Jun,08,2015 STB820S STP820S Ver 1.0 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 40V. e.Mounted on FR4 Board of 1 inch2 , 2oz. _ _ nC11VDS=37.5V,ID=26A,VGS=4.5V
www.samhop.com.tw6 Jun,08,2015 STB820S STP820S Ver 1.0 A K L BC ED F H I J G N M S T QPO R U V W SYMBOLS MILLIMETERS INCHES MIN MAX MIN MAX A B C D E F G H I J K L M N O P Q R S T U V W 9.9 10.5 0.390 0.413 J 9.5 10.3 0.374 0.406 8.3 8.9 0.327 0.350 4.7 5.5 0.185 0.217 1.5 0.059 ӿ1.6 ӿ0.063 1.0 1.4 0.039 0.055 1.07 1.47 0.042 0.058 0.76 1.06 0.030 0.042 2.04 3.04 0.080 0.120 0.2 0.6 0.0079 0.024 1.4 0.055 4.24 4.64 0.167 0.183 1.15 1.45 0.045 0.057 3.25 3.75 0.128 0.148 2.3 0.091 1.6 0.063 R0.4 R1.0 R0.0158 R0.0394 2.7 MAX 0.106 MAX 0.0 0.3 0.0000 0.0118 R0.4 R1.0 R0.0158 R0.0394 0.3 0.5 0.0118 0.0197 1.2 min 0.047 min
www.samhop.com.tw Jun,08,2015 STB820S STP820S Ver 1.0
www.samhop.com.tw8 Jun,08,2015 STB820S STP820S Ver 1.0
www.samhop.com.tw9 TOP MARKING DEFINITION TO-263 XXXXXX Product No. SamHop Logo Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) STB820S SMC internal code No. (A,B,C...Z) Jun,08,2015 STB820S STP820S Ver 1.0
www.samhop.com.tw10 TOP MARKING DEFINITION TO-220 XXXXXX Product No. SamHop Logo Production Month (1,2 ~ 9, A,B,C) STP820S Jun,08,2015 STB820S STP820S Wafer Lot No. SMC internal code No. (A,B,C...Z) Ver 1.0