STP6NA80 NJSEMI | Alldatasheet

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O1^ , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 STP6NA80 STP6NA80FI N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA80 STP6NA80FI VDSS 800V 800V RDS(on) < 1.9ii < 1.9 n ID 5.7 A 3.4 A TYPICAL Ros(on) ^ 1.68 ti ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low Ros(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS

. HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM 6(1) 5(3) Symbol VDS VDGR VGS ID ID !DM(») Plot Viso Tstg Tj Parameter Drain-source Voltage (Vcs = 0) Drain-gate Voltage (RGs = 20 ki2) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STP6NA80 STP6NA80FI 800 800 ± 30 5.7 3.6 125 3.4 2.1 0.36 2000 -65 to 150 150 Unit V V V A A A W W/°C V (•) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 ISOWATT220 2.78 62.5 0.5 300 °C/W °c/w °c/w AVALANCHE CHARACTERISTICS Symbol IAR EAS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 5 < 1%) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, 5 < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by Tj max, 5 < 1%) Max Value 5.7 165 6.5 3.6 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGs = 0) Gate-body Leakage Current (Vos = 0) Test Conditions !D=250|xA VGS=0 VDS = Max Rating VDS = Max Rating x 0.8 TC=125°C VGS = ± 30 V Min. 800 Typ. Max. 250 ± 100 Unit V HA HA nA ON (* Symbol Vos(th) RDS(on) iD(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS !D=250nA VGS = 10V |D=3A VDS > lo(on) X RDS(on)max VGs= 10 V Min. 2.25 Typ. 1.68 Max. 3.75 1.9 Unit V iJ A DYNAMIC Symbol 9fs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > lD(on) * RDS(on)max ID = 3 A VDS^ 25 V f = 1 MHz VGS= 0 Min. Typ. 6.1 1330 160 Max. 1750 210 Unit S pF pF PF

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr (di/dt)on Qg Qgs Qg<J Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400V ID=3A RG = 47 n VGS = 10 V (see test circuit, figure 3) VDD = 640V lo=6A RG=47n VGS = 10V (see test circuit, figure 5) VDD = 640 V ID = 6 A VGS = 10V Min. Typ. 170 Max. 125 Unit ns ns A/us nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640V ID = 6 A RG= 47 Q VGS = 10 V (see test circuit, figure 5) Min. Typ. 125 Max. 120 165 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD |SDM(») VSD(*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions lso = 6A VGs=0 !SD = 6 A di/dt = 100 A/U.S VDD = 100 V Tj = 150 °C (see test circuit, figure 5) Min. Typ. 850 Max. 5.7 1.6 Unit A A V ns M.C A *) Pulsed: Pulse duration = 300 us, duty cycle 1.5 %

  • ) Pulse width limited by safe operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 . - _ VDS(V) 10-'