STP652F SAMHOP | Alldatasheet
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S mHop Microelectronics C orp.a Symbol VDS VGS IDM EAS 3.25 62.5 W A PD -55 to 175 ID UnitsParameter °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 110 mJ PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 60V 29A 22 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F package. S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energyd Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA Ver 1.1 www.samhop.com.tw Oct,27,2010 Details are subject to change without notice. A24TC=70°C TC=70°C 32 W STP652F Grerr PPrPP orr GDS STF SERIES TO-220F
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 1.7 V gFS 33 S VSD CISS 1800 pF COSS 133 pF CRSS 102 pF Qg 35.5 nC nCQgs nCQgd 12.5 tD(ON) ns tr 3.5 ns tD(OFF) ns tf ns Gate-Drain Charge VDS=30V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=30V ID=1A VGS=10V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=30V,ID=14.5A,VGS=10V Fall Time Turn-On DelayTime m ohmVGS=10V , ID=14.5A VDS=10V , ID=14.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage V DS=VGS ,I D=250uA VDS=48V , VGS=0V VGS=± 2 0 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS= 0 V,ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=11A 29 39 m ohm C f=1.0MHz C VDS=30V,ID=14.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=5A 0.79 1.3 V Notes STP652F Ver 1.1 www.samhop.com.tw Oct,27,2010 2.2 a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) _ _ VDS=30V,ID=14.5A,VGS=4.5V 14 nC nC nstrr Reverse Recovery Time VGS=0V,IS=50A, dIF / dt = 100A/us Qrr Reverse Recovery Charge 54
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics
25 C125 C
Ver 1.1 www.samhop.com.tw Oct,27,2010 tp V(BR ) DSS IAS F igure 13a. Figure 13b. Unc lamped sInductive Te t Circuit ofr mWave sUnc lamped Inductive 0.01 0.1 P DM 1. R JC (t )=r (t ) * 2. =S ee Datasheet 3. T JM -T C =P * ( t ) 4. Dut y Cycle, D=t 1/ t 2 R JC R JC R JC Transient Thermal Impedance S quare W ave P uls e Duration (ms ec) F igure 14. Normalized T hermal T rans ient Impedance C urve r(t),Normalized E ffective D=0.5 0.05 0.02 0.2 0.1 0.01 S ingle P uls e R G IAS 0.01tp D.U. T L V DS - DD 20V V
Ver 1.1 www.samhop.com.tw Oct,27,2010 E D H D G I J F O A b c E O e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70
Ver 1.1 www.samhop.com.tw Oct,27,2010 F Tube