STP60L60F SAMHOP | Alldatasheet
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Sm H op Microelectronics C rp.a STP60L60F
FEATURES
Super high dense cell design for low RDS(ON) . Rugged and reliable. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Oct,13,2011 Details are subject to change without notice. S G D Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 60V 32A 15 @ VGS=10V GDS STF SERIES TO-220F Gr PPrPP Symbol VDS VGS IDM EAS W A PD -55 to 175 ID UnitsParameter °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 144 mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energyd Maximum Power Dissipationa Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA A26.8TC=70°C TC=70°C 21 W o
IGSS ±100 nA VGS(th) V gFS S CISS pF COSS pF CRSS pF Qg nC tD(ON) ns tr ns tD(OFF) ns tf ns VDS=25V,VGS=0V SWITCHING CHARACTERISTICS VDD=30V ID=1A VGS=10V RGEN=6o h m Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohmVGS=10V , ID=16A VDS=20V , ID=16A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS ,I D=250uA VDS=48V , VGS=0V VGS=± 2 0 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS c f=1.0MHz c STP60L60F www.samhop.com.tw Oct,13,2011 VSD nCQgs nCQgd Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=30V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=2A V Notes VDS=30V,ID=25A,VGS=10V a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting T J=25°C,L=0.5mH,VDD = 30V.(See Figure13) _ _ Ver 1.0 2300 142 108 162 9.6 0.78 1.3 2.8 4
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics
25 C 75 C
25 C125 C
V(BR ) DSS IAS F igure 13a. Figure 13b. Unc lamped sInductive Te t Circuit ofr mWave sUnc lamped Inductive 0.01 0.1 P DM 1. R JC (t )=r (t ) * 2. =S ee Dat asheet 3. T JM -T C =P * ( t ) 4. Dut y Cycle, D=t 1/ t 2 R JC R JC R JC Transient Thermal Impedance S quare Wave P ulse Duration (msec) F igure 14. Normalized T hermal T rans ient Impedance C urve r(t),Normalized E ffective STP60L60F Ver 1.0 www.samhop.com.tw Oct,13,2011 D=0.5 0.05 0.02 0.2 0.1 0.01 S ingle P uls e R G IAS 0.01tp D.U. T L V DS - DD 20V V
Ver 1.0 www.samhop.com.tw Oct,13,2011 E D H D G I J F O A b c E O e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70
Ver 1.0 www.samhop.com.tw Oct,13,2011 F Tube