STP5NB100 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

N - CHANNEL 1000V - 2.4Ω - 5A - TO-220/TO-220FP PowerMESH  MOSFET ν TYPICAL RDS(on) = 2.4Ω ν EXTREMELY HIGH dv/dt CAPABILITY ν 100% AVALANCHE TESTED ν VERY LOW INTRINSIC CAPACITANCES ν GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

ν HIGH CURRENT, HIGH SPEED SWITCHING ν SWITCH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM February 2000 TO-220 TO-220FP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP5NB100 STP5NB100FP V DS Drain-source Voltage (VGS =0 ) 1 0 0 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 1000 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC 5 5(*) A ID Drain Current (continuous) at Tc =1 0 0oC 3.1 3.1(*) A IDM (•) Drain Current (pulsed) 15.2 15.2 A P tot Total Dissipation at Tc =2 5 oC 135 40 W Derating Factor 1.08 0.32 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns V ISO Insulation Withstand Voltage (DC)  2000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area ( 1)ISD ≤ 5 A, di/dt≤ 200 A/µs, VDD ≤ V(BR)DSS ,T j≤ TJMAX (*) Limited only by maximum temperature allowed TYPE V DSS R DS(on) ID STP5NB100 STP5NB100FP 1000 V 1000 V <2 . 7Ω <2 . 7Ω

R thj-case Thermal Resistance Junction-case Max 0.93 3.12 oC/W R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 220 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 1000 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating VDS = Max Rating T c =1 2 5oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A 345V R DS(on) Static Drain-source On Resistance VGS =1 0V I D = 2.5 A 2.4 2.7 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max VGS =1 0V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance VDS >I D(on) xR DS(on)max ID = 2.5 A 1.5 S C is s C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1500 150 pF pF pF STP5NB100/STP5NB100FP

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =5 0 0V I D =2 . 5A R G =4 . 7 Ω VGS =1 0V (see test circuit, figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =8 0 0V I D =5A V GS =1 0V 3 9 9.6 19.2 51 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD =8 0 0V I D =5A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD =5A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A di/dt = 100 A/µ s VDD =1 0 0V T j =1 5 0oC (see test circuit, figure 5) 780 5.5 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP5NB100/STP5NB100FP

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance STP5NB100/STP5NB100FP

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP5NB100/STP5NB100FP

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STP5NB100/STP5NB100FP

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP5NB100/STP5NB100FP

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G F 123 TO-220FP MECHANICAL DATA STP5NB100/STP5NB100FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com STP5NB100/STP5NB100FP