STP5NA80 NJSEMI | Alldatasheet

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s.ti.zu , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4Q < 2.4 £} ID 4.7 A 2.8 A TYPICAL Ros(on) = 1.8H ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low Ros(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS

. HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM 3(2-) G (1) Symbol VDS Parameter Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGs = 20 kft) VGS ID ID Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C !DM(») Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 °C Viso Derating Factor Insulation Withstand Voltage (DC) Tstg Storage Temperature TJ Max. Operating Junction Temperature Value STP5NA80 STP5NA80FI 800 800 ± 30 4.7 125 2.8 1.8 0.36 2000 -65 to 150 150 Unit V V V A A A W w/°c V

  • ) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 ISOWATT220 2.78 62.5 0.5 300 °C/W °c/w °c/w AVALANCHE CHARACTERISTICS Symbol IAR EAS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 8 < 1%) Single Pulse Avalanche Energy (starting T, = 25 °C, ID = IAR, VDD = 50 V) Repetitive Avalanche Energy (pulse width limited by T, max, 5 < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by T, max, 6 < 1%) Max Value 4.7 110 4.5 Unit A mj mJ A ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (Vcs = 0) Gate-body Leakage Current (Vos = 0) Test Conditions !D=250nA VGS=0 VDS = Max Rating VDS = Max Rating x 0.8 TC=125°C VGS = ± 30 V Min. 800 Typ. Max. 250 ± 100 Unit V HA HA nA ON (*) Symbol VQS(th) RDS(on) ID(OP) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS= VGS lo= 250 (aA VGS = 10V ID =2. 5 A VDS > b(on) X RDS(on)max VGS= 10 V Min. 2.25 4.7 Typ. 1.8 Max. 3.75 2.4 Unit V sj A DYNAMIC Symbol 9fs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > lD(on) X RDS(on)max ID =2. 5 A VDS = 25 V f = 1 MHz VGs= 0 Min. 2.7 Typ. 5.2 1250 140 Max. Unit S 1700 pF 190 pF 50 pF

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr (di/dt)on Qg Qgs Qgd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400V ID =2. 5 A RG = 47i) VGS = 10V (see test circuit, figure 3) VDD=640V ID=5A RG = 47 SI VGS = 10 V (see test circuit, figure 5) VDD = 640 V ID= 5 A VGS = 10 V Min. Typ. 100 180 Max. 135 Unit ns ns A/us nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD=640V ID=5A RG = 47 U VGS = 10 V (see test circuit, figure 5) Min. Typ. 110 Max. 100 150 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD !SDM(») VSD(») tr, Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 4. 7 A VGS = 0 ISD = 5 A di/dt = 100 A/U.S VDD = 100V Tj = 150°C (see test circuit, figure 5) Min. Typ. 800 15.2 Max. 4.7 1.6 Unit A A V ns M.C A (*) Pulsed: Pulse duration = 300 us, duty cycle (•) Pulse width limited by safe operating area 1.5% Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 1 (A) 10" V": I )iC A m i S ^ i OPE I t tt 3 0° 10* V ^ ' w ilO V 1 'S JX s in Vs 1 ms 10ms W 10" taa?«aa2^ifl lu

102 ID3 VDS (V)

B.C. TIP OPER S ' . V ^ ATIO , X ^ v- ii \\ S;-- O^s 1ms 10ms 3rrs 0° 101 I02 103 V