STP4N40 SIPEX | Alldatasheet
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@™ 7929237 GO4b215 4Th MBSGTH IS] 7) SGS-THOMSON STP4N40 MICROELECTRONICS STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss | Rosie) | lo . STP4Nao 4oov | <21a | 4A STP4N40FI 400 V <212 3A = TYPICAL Rosen) = 1.652 = AVALANCHE RUGGED TECHNOLOGY = 100% AVALANCHE TESTED | = REPETITIVE AVALANCHE DATA AT 100°C. | = APPLICATION ORIENTED 8 3 CHARACTERIZATION 1 1
APPLICATIONS
» HIGH CURRENT, HIGH SPEED SWITCHING 70-220 'SOWATT220 | » SWITCH MODE POWER SUPPLIES (SMPS) | = CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER — - ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM | og) e @) é Ay ABSOLUTE MAXIMUM RATINGS symbol] —=—S—S«#@arameter Value Unit | Vos _|Gate-source Voltage +20 ve to [Drain Current (continuous) at Te = 25 °C 4 3 A i} Drain Current (continuous) at Te = 100 °C 25 19 A low(e) [Drain Current (pulsed) 16 ie A | | Terating Factor _ 028 | wac | Viso__ Insulation Withstand Voltage (DC) 2000 | Taig [Storage Temperature 65 to 150 °C T, _ |Max. Operating Junction Temperature 750 °C | (@) Puise width imited by safe operating area — May 1993 1” | : 765 |
‘STP4N40/FI ———— _ Ml 7929237 004b21b 832 MESGTH —— THERMAL DATA Cs owaro | | Riny-case [Thermal Resistance Junction-case Max Rian [Thermal Resistance Junction-ambient Max | 625 sow Rine-sink [Thermal Resistance Case-sink Typ 0.5 °ciw T, _|Maximum Lead Temperature For Soldering Purpose 300 °c AVALANCHE CHARACTERISTICS Symbol Parameter Max Value [ unit | Avalanche Current, Repetitive or Not-Repetitive 4 (pulse width limited by Tj max, 8 < 1%) [Single Pulse Avalanche Energy (starting T, = 25 °C, lo = lan, Voo = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, 8 < 1%) lan Avalanche Current, Repetitive or Not-Repetitive (Te = 100 °C, pulse width limited by Tj max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions [min. [ Typ. | Max. | unit | Vieross |Drain-source Ip= 250A Vos=0 400 v Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Vas = 0) |Vos = Max Rating x 0.8 Te= 125°C 1000 | WA. loss |Gate-body Leakage |Ves= #20 +100 | nA |Current (Vos = 0) ‘ON (*) [Symbol | Parameter Test Conditions [ min. | Typ. | Max. | Unit Vesis) (Gate Threshold Voltage |Vos= Vos lo = 250 nA [3 | v Rosier) | Static Drain-source On |Vas=10V Ip=2A Q Resistance Vos=10V lo=2A Te= 100°C Q (On State Drain Current |Vos > loon) x Rosien)max 4 Vos = 10V DYNAMIC. [Sumber [Parameter] Yooi Gonaivons | win. [ Typ. | wex. | Unt | Qis (*) [Forward Vps > lo(on) X Rosjonjmax lo= 2A Transconductance Cie [Input Capacitance |Vos=25V f=1MHz Ves=0 350 | 450 | pF Coss {Output Capacitance 68 | 90 | pF Cres Reverse Transfer 32 45 pF Capacitance 7 7 . SY iacro.ecraomcs 766
— MP 7929237 0046217 779 mmsGTH —__STPANAO/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Turn-on Time Voo=175V Ip=2A Rise Time Re =502 Ves = 10V. (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vpp=320V Ip=4A Alus | Ro = 509 Ves = 10V _ {see test circuit, figure 5) | Q, Total Gate Charge Voo = 320V In=4A Vos=10V 25 nc Qgs__|Gate-Source Charge 7 nc Qgs__|Gate-Drain Charge 1" nc SWITCHING OFF [‘Symbor | Parameter | Test Conalvons | win. | Wye [ max. | Uait | trivetty Off-voltage Rise Time |Vop=320V Ip=4A 50 ns tr Fall Time Re=50Q2 Ves =10V 28 ns | i te Cross-over Time (see test circuit, figure 5) _ 75 ns SOURCE DRAIN DIODE Isp Source-drain Current 4 Isom(*) |Source-drain Current 16 (pulsed) [ Woot) [rorwarsGn Vonage —lw=4A Ves=@ |} pv) ter Reverse Recovery Iso= 4A di/dt = 100 A/us | 400 ns Time Voo=100V_ T= 150°C Qn Reverse Recovery (see test circuit, figure 5) ) 59 ites Charge | Ina | Reverse Recovery | 29.5 A { Current — (+) Pulsed: Pulse duration = 300 us, duty cycle 1.5% ~ (*) Pulse width limited by sate operating area. Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 eum css OR ae DN) Sst Stes Sst eet: Bei lisesi emetiiieeeat (ESE Sai tof LEAN os [Ll of Peas | ERS GE eae ILS wt SRS Tit 4 FH 719-6- OPERATION S411 00m FA «F510.C. OPERATION RESHiOms FHT S| are eet i S10 EHTS Hoos HH Cte EE a Fe om Ca est oo dl me nt | ea | SS canes Rt eee wt | eT | Ae iaii mia milli Bai ae hoi ATA ni choi WP ot ot oe aty wr Te Mat Ho? aly
7 Series
STPANQO/FI mm 2929237 OO4G228 bOS MESGTH ———— Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 ‘Ss ‘re ere sts fii call Seeesicammen ail bait Pe [es Tee COT CN aeg CTECTT see fill FC eA vor eg LT 10 as AT ENTS 335 Hil Rota a Eh al | ]fsncue eats |] peal 107 ater ett [Aisivece purse | |||] canal | | OU ANA Mii to? LI eo HITT Tih Derating Curve For TO-220 Derating Curve For |SOWATT220 Pros (W) TT ooo} Prot (W) TTT core FER FEE EEE} FARE EHH aeaceessseebees suas Qeuseueeeses oo HEREC an so NH Hot fT PrP PAP try ry t{-—HN HA HA TAN EER COUPE NEP Tyr ee EEEEEEEEN EEE ao EEE Hee EES HEE SHE EES LEER SA Sees gESESEVSaEeT EEN ro ENE SuseeesZeeeuacee ESESEETaagEn Ces HEE HEE ASH HERRERA o 50 100 Tease (°C) ° 50 100 Teose (°C) Output Characteristics Transfer Characteristics OT ani LA | a 7A T os - ELT TTT TT aD Zee Cece KT EEA oy emnee eat ce acta fy} LOCA errr [ALT TT ; / af Pi jt ty Trt it y | HF (EEE es=280 | FF ene (Aer Fe LEP LA TET TT eT | 0 10 20 30 Vag) ° 2 4 6 6B 10 Vog(¥) ~ or SCS-THOMSON ———.
— MP 7929237 0046219 Sui mmscTH SST ANAOVFI Transconductance Static Drain-source On Resistance “E vos=tv | TT | (a) Lea t}4 jeune eee tH Ht Seer Pe 1 eT TT iE ee || de Tisoel | | Pit Pry LBeo rol | PT [Wii | tree SERRE Viti titty osL1TT-ET | TTT 0 1 2 3 4 Ip(A) 1 1.8 26 3.4 4.2 (A) Gate Charge vs Gate-source Voltage Capacitance Variations “OTT TTY) oon FT TTT TTT vo} Peessior LZ wool 1 eae SSGeeEEn/ a5 He eset : maeey an ef FEET Sees 4088 ran Ha sLODeEEEFC Cer LOA Ceres (OAC Ne Py Seeee0 eee lS PA of CEE Le an H Wet FE ° Ss 10 15 20 Q,(nc) o 10°20 30 40-50 Vos(V) Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature Temperature Ves¢in) scpease Rosier) ets wm [TTT [| (orm) JH aeee oS {| H eee 4a aH LoL YACT oo Pan Coy PPT TPN wT IAT oot || it TTT TT HE ener Seen ob ee ou LL TT TTT TT Livy Ty TTT) 7 ss-tHomsow 769
Tur- " on Current Slope wv ai /ar . an - bee20 = 263 MSG - - . ‘urn-off Drai . oe , . Drain-sour ss o os rce Voltage wool \\\\_| fet L * 2 A H tp ro PNG H i iit SSE ce |_| Mo wll | : a A A Ha scares : cr 40 Pao : =: st BCH Toss-over Time . I =: te (0s) CT . snr - Sp : : . I BSH ol Voo =3: on vo : : | vn He TE a ca he pat ae Zann an uaa: LH HEae ret EAE eee Acalden O80 [| i Fee Bite tal Overto: 120 Aspeeeeesee! Hie \\ ad Area Re(a) Hee et "Ee — H—- PH BH = “Hae z ; (EEEEEE ison BESEEEE : th He a) EEEEEEEH sees 2 : He mit |_| = cos a eat LT 40°C Le cad faeecctaal 770 300 oooh Hoe a HA H Heat = ‘ AY ty Tat’)
M™ 7929237 OO4b22] LTT MSGTH STP4N4O/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Vioross ‘ Vp — vo ; 2200 | 3 load Yoo low ° | to” | — Yoo “x \\ Yoo LI we rs me | Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load Oo | Jo 000r [2200 | 33 | a LaF | vey J. ‘° 520¥= eu al so00 pws, * i mal ° — ~_ J fe a me Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time aoe 5 4 Se kis ero Fe Ls ee BUR elk ous a 3 ) 0 wT ee &r SGS-THOMSON — ReMaIe MOSS 771 i