STP45L01F SAMHOP | Alldatasheet

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Ver1.0 S mH op Mic roe le c t ronic s C orp.a

FEATURES

Super high dense cell design for low RDS(ON) . Rugged and reliable. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Jun,03,2010 Details are subject to change without notice. S G D PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ ) Typ 100V 40A 20 @ VGS=10V G D S STF SERIES TO-220F STP45L01F Green Product Symbol V DS VGS IDM EAS W A PD 62.5 -55 to 150 ID UnitsParameter 100 118 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 560 mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energyd Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA A32TC=70°C TC=70°C 40 W a a

Jun,03,2010 Ver1.0 www.samhop.com.tw2 Symbol Min Typ Max Units BVDSS 100 V IGSS ±100 nA VGS(th) V gFS S CISS 3200 pF COSS 241 pF CRSS 176 pF Qg nC tD(ON) ns tr ns tD(OFF) ns tf ns VDS=25V,VGS=0V SWITCHING CHARACTERISTICS VDD=50V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohmV GS=10V , ID=20A VDS=10V , ID=20A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS c f=1.0MHz c VSD nCQgs nCQgd 10.2Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=50V,ID=20A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=7A 0.78 1.3 V Notes VDS=50V,ID=20A,VGS=10V a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting T J=25°C,L=5mH,VDD = 80V.(See Figure13) _ _ 2 2.9 4

Figure 12. Maximum Safe Operating Area Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. switching characteristics

75 C 25 C

V ( B R )D S S I A S F igure 13a. F igure 13b. Unc l amped sInduct ive Te t Circu it of r mWave sUnc l amped Induct ive 0.01 0.1 P D M 1. R J C (t )=r (t ) * 2. =S e e D a t a s he e t 3. T J M- T C = P * (t ) 4. D ut y C yc le , D =t 1/ t 2 R J C R J C R J C T ra ns ie nt T he rma l Impe da nc e S qua re W a ve P uls e D ura t ion (ms e c ) F igure 14. N orma liz e d T he rma l T ra ns ie nt Impe da nc e C urve r(t ), N orma liz e d E ffe c t ive www.samhop.com.tw5 D = 0 . 5 0.05 0.02 0.2 0.1 0.01 S ingle P uls e STP45L01F Jun,03,2010 Ver1.0 R G IA S 0 .0 1tp D .U .T L V D S - D D 2 0 V V

www.samhop.com.tw6 E D H D G I J F O A b c E O e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70 STP45L01F Jun,03,2010 Ver1.0

www.samhop.com.tw Jun,03,2010 F Tube Ver1.0