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S mHop Microelectronics C orp.a STB4410 STP4410 Symbol VDS VGS IDM EAS 62.5 W A PD -55 to 175 ID UnitsParameter 100 390 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 576 mJ PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 75A 7.0 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. STB SERI ES TO-263(DD-PAK) G S D STP SERI ES TO-220 S D G S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) Limit Drain Current-Continuous c TC=25°C -Pulsed a c A Avalanche Energy d Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA www.samhop.com.tw Dec,26,2014 Details are subject to change without notice. A63TC=70°C TC=70°C 52.5 W Green Product Ver 1.0
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 2 V 7.0 gFS 74 S VSD CISS 3715 pF COSS 515 pF CRSS 315 pF Qg 116 nC 147 nCQgs 113 nCQgd tD(ON) ns tr 9.5 ns tD(OFF) ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=50V,ID=25A,VGS=10V Fall Time Turn-On DelayTime m ohm VGS=10V , ID=37.5A VDS=10V , ID=37.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage V DS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 9.0 b f=1.0MHz b VDS=50V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=10A 0.77 1.3 V Notes STB4410 STP4410 www.samhop.com.tw Dec,26,2014 Ver 1.0 a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting T J=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz.
Ver 1.0 www.samhop.com.tw Dec,26,2014
Ver 1.0 www.samhop.com.tw Dec,26,2014
Ver 1.0 www.samhop.com.tw Dec,26,2014
www.samhop.com.tw9 TOP MARKING DEFINITION TO-220 XXXXXX Product No. SamHop Logo Production Month (1,2 ~ 9, A,B,C) STP4410 Dec,26,2014 Wafer Lot No. SMC internal code No. (A,B,C...Z) Ver 1.0 STB4410 STP4410
www.samhop.com.tw10 TOP MARKING DEFINITION TO-263AB XXXXXX Product No. SamHop Logo Production Month (1,2 ~ 9, A,B,C) STB4410 Dec,26,2014 Wafer Lot No. SMC internal code No. (A,B,C...Z) Ver 1.0 STB4410 STP4410