STB432S SAMHOP | Alldatasheet
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S mH op Mic roe le c t ronic s C orp.a STB/P432S Symbol V DS VGS IDM EAS W A PD 62.5 -55 to 150 ID UnitsParameter 240 V V±20 T C=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS mJ PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ ) Max 40V 60A 11 @ VGS=4.5V 9 @ VGS=10V N-Channel Logic Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energyd Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Ver 1.0 www.samhop.com.tw Jun,24,2008 Details are subject to change without notice. TC=25°C 50 °C/WThermal Resistance, Junction-to-AmbientR JA 2 °C/WThermal Resistance, Junction-to-CaseR JC 130 S T B S E R IE S T O -263(D D -P A K ) G S D S T P S E R IE S T O -220 S D G
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 1 V gFS S VSD CISS 1600 pF COSS 280 pF CRSS 150 pF Qg nC nCQgs nCQgd tD(ON) ns tr 3.5 ns tD(OFF) 7.3 ns tf ns Gate-Drain Charge VDS=15V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=15V ID=30A VGS=10V RGEN=3.3 ohm Total Gate Charge Rise Time Turn-Off Delay Time V DS=15V,ID=30A,VGS=10V Fall Time Turn-On Delay Time m ohmVGS=10V , ID=30A VDS=10V , ID=30A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage I DSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=32V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=28A m ohm c f=1.0MHz c VDS=15V,ID=30A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS c VGS=0V,IS=30A 0.95 1.3 V Notes STB/P432S Ver 1.0 www.samhop.com.tw Jun,24,2008 nCVDS=15V,ID=28A,VGS=4.5V 15 a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting T J=25°C,L=1.25mH,RG=25Ω ,VDD = 20V.(See Figure13) _ _ 1.7 7 9 9 11 IS Maximum Continuous Drain-Source Diode Forward Current A30
Ver 1.0 www.samhop.com.tw Jun,24,2008
Ver 1.0 www.samhop.com.tw Jun,24,2008
Ver 1.0 www.samhop.com.tw Jun,24,2008