STP36N06

STP36N06 NJSEMI | Alldatasheet

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<3£,mi-L.ondiictoi iJ-^i , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 STP36N06 STP36N06FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI VDSS 60 V 60 V RDS(on) < 0.04 n < 0.04 n ID 36 A 21 A TYPICAL Ros(on) = 0.03 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM S(3) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID !DM(») Plot Viso Tstg Parameter Drain-source Voltage (Vos = 0) Drain- gate Voltage (Res = 20 kQ) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STP36N06 STP36N06FI ±20 144 120 0.8 144 0.27 2000 -65 to 175 175 Unit V V V A A A W W/°C V (•) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Lead Temperature For Soldering Max M ax Typ Purpose TO -2 20 1.25 ISOWATT220 3.75 625 0 5 300 °C/W °C/W °C/W AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 5 < 1%) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) EAR Repetitive Avalanche Energy (pulse width limited by Tj max, 5 < 1%) IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by Tj max, 6 < 1%) Max Value 240 Unit A mJ m J A ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter V(BR)oss Drain-source Breakdown Voltage loss Zero Gate Voltage Dram Current (Vos= 0) loss Gate-body Leakage Current (Vos = 0) Test Conditions ID = 250 pA VGS= 0 VDS = Max Rating VDS= Max Rating x 0.8 TC=125°C VGS = ± 20 V Win. Typ. Max. ± 100 Unit V MA MA nA ON (*) Symbol Parameter Vos(th) Gate Threshold Voltage RDS(on) Static Drain-source On Resistance lD(on) On State Drain Current Test Conditions VDS= VGS ID= 250 uA VGS - 10V ID = 18 A VDS> lD(on)X RDS(on)max VGS = 10 V Min. Typ. 2 2.9 0 03 Max. 0 04 Unit V Q A DYNAMIC Symbol Parameter 9fs (*) Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > lD(on) X RDS(on)max ID =18 A VDS= 25 V f = 1 MHz Vos= 0 Min. Typ. 12 16 1130 480 140 Max. 1500 650 200 Unit S PF PF pF

ELECTRICAL CHARACTERISTICS (continued) SWITCH ING ON Symbol Parameter td(on) Turn-on Time tr Rise Time (di/dt)on Turn-on Current Slope Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDD= 25 v ID= 18 A RG = 50 o VGS = 10 V (see test circuit, figure 3) VDD= 40 V ID = 36 A RG = 50 Q VGS = 10 v (see test circuit, figure 5) VDD = 40 V ID= 36 A VGs= 10 V Min. Typ. 280 200 Max. 400 Unit ns ns A/us nC nC nC SWITCH ING OFF Symbol Parameter tr(Voff) Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions VDD=40V ID=36A RG= 50 Q VGS = 10 V (see test circuit, figure 5) Min. Typ. 1 10 105 220 Max. 160 150 310 Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD Source-dram Current ISDM(') Source-drain Current (pulsed) VSD(*) Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current (*) Pulsed: Pulse duration = 300 us, duty cycle

• ) Pulse width limited by safe operating area Test Conditions ISD = 36 A VGS= 0 ISD = 36 A di/dt = 100 A/ps VDD = 30 v Tj = 150 °C (see test circuit, figure 5) Min. Typ. 0.2 4.5 Max. 144 Unit A A V ns MC A Safe Operating Areas ForTO-220 Safe Operating Areas For ISOWATT22Q 10'. to1. to9, id" y a'1 BS 5 - • ILJ u 1— I c t >PE: '"o*1 \\ \\ RATIO a«J, * N fo'2 ' 100JU5 1 ms fflini ns 3 m»
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