STP35N10 SAMHOP | Alldatasheet
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Technical content
S mHop Microelectronics C orp.a Symbol VDS VGS IDM 62.5 W A PD -55 to 175 ID UnitsParameter 100 103 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 35A 30 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. STP SERI ES TO-220 S D G S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) Limit Drain Current-Continuous a TC=25°C -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA www.samhop.com.tw Apr,22,2014 Details are subject to change without notice. A29.3TC=70°C TC=70°C 52.5 W STP35N10 Ver 1.1 Green Product
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 1.5 V gFS 12 S VSD CISS 1490 pF COSS 155 pF CRSS 100 pF Qg nC nCQgs nCQgd tD(ON) ns tr 2.6 ns tD(OFF) ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=50V,ID=17.5A,VGS=10V Fall Time Turn-On DelayTime m ohm VGS=10V , ID=17.5A VDS=10V , ID=17.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage V DS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 3.5 b f=1.0MHz b VDS=50V,ID=17.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=5A 1.3 V Notes www.samhop.com.tw2 a.Drain current limited by maximum junction temperature. b.Guaranteed by design, not subject to production testing. Apr,22,2014 STP35N10 Ver 1.1 2.5 0.8
www.samhop.com.tw6 Apr,22,2014 STP35N10 Ver 1.1
www.samhop.com.tw7 Apr,22,2014 STP35N10 Ver 1.1
www.samhop.com.tw8 TOP MARKING DEFINITION TO-220 XXXXXX Product No. SamHop Logo Production Month (1,2 ~ 9, A,B,C) STP35N10 Apr,22,2014 STP35N10 Wafer Lot No. SMC internal code No. (A,B,C...Z) Ver 1.1