STF10N62K3 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected

Applications

■ Switching applications

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Figure 1. Internal schematic diagram

8.4 A(1)

8.4 A 125 W

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature
  2. Pulse width limited by safe operating area

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
  2. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
  3. C oss eq. energy related is defined as a constant equival ent capacitance giving the same stored energy as

integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP, Figure 3. Thermal impedance for TO-220FP, Figure 4. Safe operating area for I²PAK, TO- Figure 5. Thermal impedance for I²PAK, TO- Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Normalized BV DSS vs temperature Figure 9. Static drain-source on-resistance Figure 10. Output capacitance stored energy Figure 11. Capacitance variations Figure 12. Gate charge vs gate-source voltage Figure 13. Normalized on-resistance vs

0.078 VGS=10V

0 Qg(nC)

Figure 14. Normalized gate threshold voltage Figure 15. Maximum avalanche energy vs Figure 16. Source-drain diode forward

220 VDD=50 V

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

4 Package mechanical data

Table 9. TO-220FP mechanical data

Figure 23. TO-220FP drawing

Table 10. I 2PAKFP (TO-281) mechanical data Figure 24. I 2PAKFP (TO-281) drawing

Figure 25. I²PAK (TO-262) drawing Table 11. I²PAK (TO-262) mechanical data

Table 12. TO-220 type A mechanical data

Figure 26. TO-220 type A drawing

5 Revision history

Table 13. Document revision history 08-Jun-2009 1 First release. ratings, Table 3: Thermal data, Table 4: On /off states. 13-Sep-2012 4 Changed value in the title from 3.8 A to 8.4 A.