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S mHop Microelectronics C orp.a Symbol VDS VGS IDM 0.55 62.5 W A PD 227 -55 to 150 ID UnitsParameter 100 120 480 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 120A 4.0 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. STP SERI ES TO-220 S D G S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) Limit Drain Current-Continuous b TC=25°C -Pulsed b A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA www.samhop.com.tw Aug,22,2016 Details are subject to change without notice. A76TC=100 °C TC=100°C 91 W STP10N03 Ver 1.0 Green Product EAS Single Pulse Avalanche Energy c mJ300
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 2 V 3.3 gFS 47 S VSD CISS 6900 pF COSS 1250 pF CRSS 47 pF Qg nC nCQgs nCQgd tD(ON) 117 ns tr ns tD(OFF) ns tf ns Gate-Drain Charge VDS=50V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN= 2.5 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=50V,ID=20A,VGS=10V Fall Time Turn-On DelayTime m ohm VGS=10V , ID=50A VDS=10V , ID=20A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage V DS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 4.0 a f=1.0MHz a VDS=50V,ID=20A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=50A 1.3 V www.samhop.com.tw2 Aug,22,2016 STP10N03 Ver 1.0 0.85 Notes a.Guaranteed by design, not subject to production testing. b.Drain current limited by maximum junction temperature. c.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure10) d.Mounted on FR4 Board of 1 inch2 , 2oz.
www.samhop.com.tw6 Aug,22,2016 STP10N03 Ver 1.0
www.samhop.com.tw7 Aug,22,2016 STP10N03 Ver 1.0
www.samhop.com.tw8 TOP MARKING DEFINITION TO-220 XXXXXX Product No. SamHop Logo Production Month (1,2 ~ 9, A,B,C) STP10N03 Aug,22,2016 STP10N03 Wafer Lot No. SMC internal code No. (A,B,C...Z) Ver 1.0