STM121N SAMHOP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

S mHop Microelectronics C orp.a Symbol VDS VGS IDM AID UnitsParameter 100 V V±20Gate-Source Voltage Drain-Source Voltage

FEATURES

Super high dense cell design for low RDS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.1 www.samhop.com.tw Jul,25,2012 Details are subject to change without notice. TA=25°C WPD °C-55 to 150 TA=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG 62.5 °C/WThermal Resistance, Junction-to-AmbientR JA TA=70°C A EAS mJSingle Pulse Avalanche Energyd TA=70°C W a a a 2.8 STM121N Gr PPrPP 2.2 1.28 PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Max 100V 2.8A 192 @ VGS=4.5V 155 @ VGS=10V Dual N-Channel Enhancement Mode Field Effect Transistor SO- 8 G 2 S 2 G 1 S 1 Suface Mount Package.

IGSS ±100 nA VGS(th) V 124 m ohmVGS=10V , ID=1.4A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS ,I D=250uA VDS=80V , VGS=0V VGS=± 2 0 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA ON CHARACTERISTICS 155 STM121N Ver 1.1 www.samhop.com.tw Jul,25,2012 1 1.9 3 gFS S CISS 725 pF COSS 50 pF CRSS 32 pF Qg nC 10.7 21.5 tD(ON) ns tr ns tD(OFF) ns tf ns VDS=25V,VGS=0V SWITCHING CHARACTERISTICS VDD=50V ID=1A VGS=10V RGEN=6o h m Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=10V , ID=1.4A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance c f=1.0MHz c VSD nCQgs nCQgd 1.4 2.6Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=50V,ID=1.4A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1A 0.78 1.3 V Notes VDS=50V,ID=1.4A,VGS=10V a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting T J=25°C,L=0.5mH,VDD = 50V.(See Figure13) _ _ VGS=4.5V , ID=1.25A mo h m142 192 1015 3.6

Ver 1.1 www.samhop.com.tw Jul,25,2012 tp V(BR ) DSS IAS F igure 13b. ofr mWave sUnc lamped Inductive 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 0.01 0.02 0.5 0.2 0.1 0.05 Normalized Transient Thermal Resistance P DM 1. R ӰJA (t )=r (t ) * RӰJA 2. R ӰJA =S ee Dat asheet 3. T JM -T A =P DM*R ӰJA (t ) 4. Dut y Cycle, D=t 1/t2 Single Pulse F igure 13a. Unc lamped sInductive Te t Circuit R G IAS 0.01tp D.U. T L V DS - DD 20V V

Ver 1.1 www.samhop.com.tw Jul,25,2012 PACKAGE OUTLINE DIMENSIONS SO-8 SYMBOLS MIN MIN 0.004 0.189 1.35 0.10 1.25 0.17 4.80 3.70 MAX MAX 0.069 0.010 0.064 0.010 0.197 0.157 1.75 0.25 1.63 0.25 5.00 4.00 MILLIMETERS INCHES E D A A1be H L hX4 5 O A C D E e H L h 1.27 REF. 5.80 6.20 0.40 1.27 0.25 0.50

0.050 BSC

0.228 0.244 0.010 C b 0.0200.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020

Ver 1.1 www.samhop.com.tw Jul,25,2012 SO-8 Tape and Reel Data SO-8 Carrier Tape SO-8 Reel unit:р PACKAGE SOP 8N 150п A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.50 5.25 2.10 ӿ1.5 (MIN) ӿ1.55 12.0 +0.3 - 0.1 1.75 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 M N W W1 H K S G R V 330 ² 1 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 2.0 ²0.15 A A E P0D0A0 FEEDING DIRECTION T SECTION A-A TERMINAL NUMBER 1 M N W G V R S K H