STM102D

STM102D SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a STM102D Symbol VDS VGS IDM EAS W A PD -55 to 150 ID UnitsParameter 100 2.0 7.2 V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS mJ PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 100V 2.0A 328 @ VGS=4.5V 216 @ VGS=10V Dual Enhancement Mode Field Effect Transistor (N and P Channel) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) N-Channel Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energyd Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG www.samhop.com.tw Nov,30,2011 Details are subject to change without notice. 62.5Thermal Resistance, Junction-to-AmbientR JA a TC=25°C PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -100V -1.3A 614 @ VGS=-4.5V 547 @ VGS=-10V -100 -1.3 -4.7 ±20 P-Channel TC=70°C A1.6 -1.0

1.28 WTC=70°C

°C/W 2516 Ver 1.0 SO- 8 G 2 S 2 G 1 S 1 G PP

4 Symbol Min Typ Max Units

IGSS ±100 nA VGS(th) 1.0 V 173 gFS 2 S VSD CISS 305 pF COSS 36 pF CRSS 23 pF Qg 7.5 nC 8.2 nCQgs nCQgd tD(ON) 5.5 ns tr 0.95 ns tD(OFF) 1.7 ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN=6o h m Total Gate Charge Rise Time Turn-Off Delay Time VDS=50V,ID=1A,VGS=10V Fall Time Turn-On Delay Time m ohmVGS=10V , ID=1.0A VDS=10V , ID=1.0A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS ,I D=250uA VDS=80V , VGS=0V VGS=± 2 0 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS= 0 V,ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=0.8A 216 243 328 m ohm c f=1.0MHz c VDS=50V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=2.0A 0.83 1.3 V STM102D www.samhop.com.tw Nov,30,2011 nCVDS=50V,ID=1A,VGS=4.5V 3.2 1.7 b Ver 1.0

IGSS ±100 nA VGS(th) -1.0 V 438 gFS 3.6 S VSD CISS 840 pF COSS 47 pF CRSS 29 pF Qg nC nCQgs nCQgd tD(ON) ns tr 1.5 ns tD(OFF) 2.9 ns tf ns Gate-Drain Charge VDS=-25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=-50V ID=-0.65A VGS=-10V RGEN=6o h m Total Gate Charge Rise Time Turn-Off Delay Time VDS=-50V,ID=-0.65A,VGS=-10V Fall Time Turn-On Delay Time m ohmVGS=-10V , ID=-0.65A VDS=-10V , ID=-0.65A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS ,I D=-250uA VDS=-80V , VGS=0V VGS=± 2 0 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS= 0 V,ID=-250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=-4.5V , ID=-0.6A 547 455 614 m ohm c f=1.0MHz c VDS=-50V,ID=-0.65A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=-3A -0.86 -1.3 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting T J=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) _ _ STM102D www.samhop.com.tw Nov,30,2011 nCVDS=-50V,ID=-0.65A,VGS=-4.5V 7 -1.8 b Ver 1.0

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area

125 C 25 C

Ver 1.0 www.samhop.com.tw Nov,30,2011 tp V(BR ) DSS IAS F igure 13b. ofr mWave sUnc lamped Inductive 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 0.01 0.02 0.5 0.2 0.1 0.05 Normalized Transient Thermal Resistance P DM 1. R ӰJA (t )=r (t ) * RӰJA 2. R ӰJA =S ee Dat asheet 3. T JM -T A =P DM*R ӰJA (t ) 4. Dut y Cycle, D=t 1/t2 Single Pulse F igure 13a. Unc lamped sInductive Te t Circuit R G IAS 0.01tp D.U. T L V DS - DD 20V V

V(BR ) DSS IAS Figure 13b. ofr mWave sUnc lamped Inductive STM102D www.samhop.com.tw Nov,30,2011 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Single Pulse P DM 1. RthJA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA =P DM*R JA (t) 4. Duty Cycle, D=t1/t2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 Normalized Transient Thermal Resistance Ver 1.0 F igure 13a. Unclamped sInductive Te t Circuit R G IAS 0.01tp D.U. T L V DS - DD 20V V

Ver 1.0 www.samhop.com.tw Nov,30,2011 PACKAGE OUTLINE DIMENSIONS SO-8 SYMBOLS MIN MIN 0.004 0.189 1.35 0.10 1.25 0.17 4.80 3.70 MAX MAX 0.069 0.010 0.064 0.010 0.197 0.157 1.75 0.25 1.63 0.25 5.00 4.00 MILLIMETERS INCHES E D A A1be H L hX4 5 O A C D E e H L h 1.27 REF. 5.80 6.20 0.40 1.27 0.25 0.50

0.050 BSC

0.228 0.244 0.010 C b 0.0200.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020

www.samhop.com.tw Nov,30,2011 SO-8 Tape and Reel Data SO-8 Carrier Tape SO-8 Reel unit:р PACKAGE SOP 8N 150п A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.50 5.25 2.10 ӿ1.5 (MIN) ӿ1.55 12.0 +0.3 - 0.1 1.75 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 M N W W1 H K S G R V 330 ² 1 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 2.0 ²0.15 A A E P0D0A0 FEEDING DIRECTION T SECTION A-A TERMINAL NUMBER 1 N W M G V R H K S Ver 1.0