STM101N SAMHOP | Alldatasheet
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S mH op Mic roe le c t ronic s C orp.a STM101N Symbol VDS VGS IDM EAS W A PD 2.8 -55 to 150 ID UnitsParameter 100 °C/W V V±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS 2.3 mJ
FEATURES
Super high dense cell design for low RDS(ON) . Rugged and reliable. Suface Mount Package. N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energyd Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-AmbientR JA Ver1.0 www.samhop.com.tw Oct,08,2010 Details are subject to change without notice. S O -8 a TA=25°C TA=70°C A W 2.4 TA=70°C 1.8 Green Product PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ ) Typ 100V 3A 260 @ VGS=4.5V 170 @ VGS=10V
Ver1.0 www.samhop.com.tw Oct,08,2010 Symbol Min Typ Max Units BVDSS 100 V IGSS ±100 nA VGS(th) 1 V 170 gFS 5.5 S VSD CISS 310 pF COSS 35 pF CRSS 20 pF Qg nC nCQgs 16.5 nCQgd 3.5 tD(ON) 5.5 ns tr ns tD(OFF) ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time VDS=50V,ID=1.5A,VGS=10V Fall Time Turn-On Delay Time m ohmVGS=10V , ID=1.5A VDS=10V , ID=1.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=1A 260 m ohm c f=1.0MHz c VDS=50V,ID=1.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1A 0.785 1.3 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25 °C,L=0.5mH,VDD=50V,VGS=10V.(See Figure13) _ _ 1.8 210 350
- R J A =S e e D a t a s he e t
Figure 14. Normalized Thermal Transient Impedance Curve
Ver1.0 www.samhop.com.tw Oct,08,2010 PACKAGE OUTLINE DIMENSIONS SO-8 SYMBOLS MIN MIN 0.004 0.189 1.35 0.10 1.25 0.17 4.80 3.70 MAX MAX 0.069 0.010 0.064 0.010 0.197 0.157 1.75 0.25 1.63 0.25 5.00 4.00 MILLIMETERS INCHES E D A A1be H L h X 45 O A C D E e H L h 1.27 REF. 5.80 6.20 0.40 1.27 0.25 0.50
0.050 BSC
0.228 0.244 0.010 C b 0.0200.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
www.samhop.com.tw Oct,08,2010 SO-8 Tape and Reel Data SO-8 Carrier Tape SO-8 Reel unit:р PACKAGE SOP 8N 150п A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.50 5.25 2.10 ӿ1.5 (MIN) ӿ1.55 12.0 +0.3 - 0.1 1.75 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 M N W W1 H K S G R V 330 ² 1 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 2.0 ²0.15 A A E P0D0A0 FEEDING DIRECTION T SECTION A-A TERMINAL NUMBER 1 Ver1.0