STLL60P SEMTECH_ELEC | Alldatasheet
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Dated : 07/02/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage dc V R 20 V Peak Reverse Voltage V RM 45 V Average Rectified Output Current I O 50 mA Peak Forward Current I FM 150 mA Surge Forward Current I surge 500 mA Junction Temperature T j 75 OC Storage Temperature Range T S -55 to +175 OC Characteristics at Ta = 25oC Symbol Min. Typ. Max. Unit Forward Current at VF = 1V IF 4 - - mA Reverse Currents at VR = 10V IR - - 50 μA Junction Capacitance C at f = 1MHz, V = 1V - - - 1 pF Rectification Efficiency at Vi = 2Vrms, = 5KΩ η 55 - - % O u t p u t Input 2Vrms Rectification Efficiency Measurement Circuit 20PF 5KΩ