MMBD2835 SEMTECH_ELEC | Alldatasheet

Document overview

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Technical content

Features

  • Small package
  • Low forward voltage
  • Fast reverse recovery time
  • Small total capacitance

Applications

  • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage MMBD2835 MMBD2836 VR 35 75 V Forward Current I F 100 mA Power Dissipation P d 300 mW Junction Temperature T j 150 OC Storage Temperature Range T s - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA VF VF VF 1.2 V V V Reverse Current at VR = 30 V at VR = 50 V MMBD2835 MMBD2836 I R 100 100 nA Reverse Breakdown Voltage at IR = 100 µA MMBD2835 MMBD2836 V (BR)R V Diode Capacitance at f = 1 MHz CT - 4 pF Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA trr - 4 ns Marking Code: A1 SOT-23 Plastic Package

Dated : 10/10/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMBD2835, MMBD2836