STW9NA80 NJSEMI | Alldatasheet

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J i, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW9NA80 STH9NA80FI VDSS 800 V 800 V RDS(on) < 1.0Q < 1.0U ID 9.1 A 5.9 A TYPICAL Ros(on) = 0.85 n ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

  • HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID |DM(») Plot Viso Tglg Parameter Drain-source Voltage (VGs = 0) Drain- gate Voltage (Ros = 20 kSJ) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STW9NA80 STH9NA80FI 800 800 ± 30 9.1 36.4 190 1.52 5.9 3.9 36.4 0.64 4000 -65 to 150 150 Unit V V V A A A W W/°C V
  • ) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 0.65 ISOWATT218 1.56 0.1 300 °C/W °C/W °C/W AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 9.1 415 Unit A mj ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDs = 0) Test Conditions ID= 250 HA VGS = 0 VDS = Max Rating VDS = Max Rating TC=100°C VGS = ± 30 V Mill. 800 Typ. Max. 500 ± 100 Unit V HA HA nA ON(*) Symbol VGS(th) RDS(on) lD(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = V6S ID = 250 ^A VGS = 10V ID= 4.5 A VDS > ID(OH) x RDS(on)max VGS = 10 V Min. 2.25 9.1 Typ. 0.85 Max. 3.75 Unit V u A DYNAMIC Symbol 9fs (*) Cjss Coss Crss Parameter Forward Transcend uctance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(OP) x Ros(on)max ID - 4.5A VDS = 25 V f = 1 MHz VGS = 0 Min. 7.5 Typ. 2900 290 Max. 3800 380 105 Unit S PF PF PF

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400V ID = 4.5 A RG = 4.7 £} VGS = 10 V (see test circuit, figure 3) VDD = 640 V ID = 9 A VGS=10V Min. Typ. 115 Max. 150 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640 V ID = 9 A RG = 4.7 n VGS = 10V (see test circuit, figure 5) Min. Typ. Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM(') VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 9.1 A VGS = 0 !SD= 9 A di/dt = 100 A/U.S VDD = 100 V Tj = 150°C (see test circuit, figure 5) Min. Typ. 765 113.4 Max. 9.1 36.4 1.6 Unit A A V ns uc A («) Pulsed: Pulse duration = 300ns, duty cycle 1,5% (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 10'