STW8NA80 NJSEMI | Alldatasheet

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duct *., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 STW8NA80 STH8NA80FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW8NA80 STH8NA80FI VDSS 800 V 800 V RDS(on) < 1.50 Q. < 1.50 n ID 7.2 A 4.5 A TYPICAL RDs(0n) = 1.3 Q + 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled rug- gednessand superior switching performance.

APPLICATIONS

. HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Q(2) Symbol VDS VDGR VGS ID ID IDM(') Plot V,so Tstg Parameter Drain-source Voltage (VQS = 0) Drain- gate Voltage (Res = 20 kfi) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STW8NA80 STH8NA80FI 800 800 ± 30 7.2 4.5 28.8 175 1.4 4.5 2.8 28.8 0.56 4000 -65 to 150 150 Unit V V V A A A W W/°C V

  • ) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 0.71 ISOWATT218 1.78 0.1 300 °C/W °C/W °C/W AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T, max, 5 < 1%) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7.2 700 Unit A mj ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGs = 0) Gate-body Leakage Current (Vos = 0) Test Conditions lD=250^iA VGS=0 VDS = Max Rating VDS = Max Rating TC=100°C VGS = ± 30 V Min. 800 Typ. Max. 500 100 Unit V HA UA nA ON(*) Symbol VcS(Ih) RDS(on) iD(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS ID = 250 ^A VGS = 10V ID= 4A VDS > lD(on) * RDS(on)max VGS = 10 V Min. 2.25 7.2 Typ. 1.3 Max. 3.75 1.5 Unit V Q A DYNAMIC Symbol 9fs (*) ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > lD(on) X RDS(on)max ID = 4 A VDS = 25 V f = 1 MHz VGS = 0 Min. 4.5 Typ. 7.9 1750 188 Max. 2300 245 Unit S PF pF pF

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr (di/dt)Qn Qg Q8s Qgd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400 V ID=4A RG = 4.7U VGS = 10V VDD = 640 V ID = 8 A RG= 47 iJ VGS = 10 V VDD = 400 V ID = 8 A VCS=10V Min. Typ. 170 Max. 100 Unit ns ns A/us nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640 V lo=8A RG = 4.7 11 VGS = 10V Min. Typ. Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM(') VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 7.2 A VGS = 0 !SD= 7.5 A di/dt = 100 A/U.S VDD = 100V T, = 150°C Min. Typ. 850 Max. 7.2 28.8 1.6 Unit A A V ns u.C A (*) Pulsed: Pulse duration = 300 \\is, duty cycle 1.5 % (•) Pulse width limited by safe operating area