STH7NA80FI

STW7NA80 NJSEMI | Alldatasheet

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Technical content

Jziizu ^s.mi.-tonaucto'i iJ^ioaucti, Una. CX t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 STW7NA80 STH7NA80FI N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW7NA80 STH7NA80FI VDSS 800 V 800 V RDS(on) < 1.9 Q < 1.9 a ID 6.5 A 4 A TYPICAL Ros(on) = 1.68 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

. HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID |DM{») Plot Viso Tstg Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (Res = 20 kQ) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STW7NA80 STH7NA80FI 800 800 ± 30 6.5 150 1.2 2.5 0.48 4000 -65 to 150 150 Unit V V V A A A W W/°C V (•) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 0.83 ISOWATT218 2.08 0.1 300 °c/w °c/w °c/w AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 8 < 1%) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6.3 320 Unit A mJ ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDs = 0) Test Conditions lD=250|jA VGS=0 VDS = Max Rating VDS = Max Rating TC=100°C VQS = ± 30 V Min. 800 Typ. Max. ± 100 Unit V HA HA nA ONM Symbol VGS(th) RoS(on) ID(OH) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS ID = 250 ^A VGS = 10V ID= 3.5 A VDS > ID(OH) X RDS(on)max VGS = 1 0 V Min. 2.25 Typ. 1.68 Max. 3.75 1.9 Unit V Q A DYNAMIC Symbol 9fS (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > to(on) X RDS(on)max lp= 3.5 A VDS= 25 V f = 1 MHz VGS = 0 Min. 4.5 Typ. 6.3 1330 160 Max. 1750 210 Unit S pF pF pF

ELECTRICAL CHARACTERISTICS

td(on) tr (di/dt)on Qg Qgs Qgd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400 V ID = 3.5 A RQ = 47il VGS = 10 V (see test circuit, figure 3) VDD = 640V ID = 7 A RG = 470 VGS= 10 V (see test circuit, figure 5) VDD = 640 V ID = 7 A VGS = 10 V Min. Typ. 3.5 9.5 170 Max. 125 Unit ns ns A/U.S nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640 V ID = 6 A RG = 47 n VGS = 10 V (see test circuit, figure 5) Min. Typ. 125 Max. 120 165 Unit ns ns ns SOURCE DRAIN DIODE Symbol Iso ISDM(') VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 7 A VGS = 0 ISD= 7 A di/dt = 100 A/U.S VDD = 100 V TJ = 150 °C (see test circuit, figure 5) Min. Typ. 850 Max. 6.5 1.6 Unit A A V ns (iC A («) Pulsed: Pulse duration = 300 us, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 cc ID(A)| io'BUJ id" 10"