STH160N4LF6-2 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 17

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Logic level drive
  • High avalanche ruggedness
  • 100% avalanche tested

Applications

  • Switching applications

Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. $0Y 7$% Ć TAB H2PAK-2 Order code V DS RDS(on) max I D PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width is limited by safe operating area

Table 3. Thermal resistance

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4. Static Table 5. Dynamic Table 6. Switching on/off (inductive load)

Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

12 ID=60V

30 ID(A)

Figure 8. Capacitance variations Figure 9. Normalized V (BR)DSS vs temperature Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs Figure 12. Source-drain diode forward

1.1 ID=250 µA

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

Figure 19. Gate charge waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 20. H²PAK-2 drawing

Table 8. H²PAK-2 mechanical data

Figure 21. H²PAK-2 recommended footprint (dimensions are in mm)

5 Packaging mechanical data

Figure 22. Tape

Figure 23. Reel Table 9. H²PAK-2 leads tape and reel mechanical data

6 Revision history

Table 10. Document revision history 24-Apr-2014 1 First release.