STG8810A SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a STG8810A Symbol VDS VGS IDM 62.5 W A PD 2.0 -55 to 150 ID UnitsParameter 7.0 °C/W V V±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 20V 7A 19.5 @ VGS=3.1V 14.5 @ VGS=4.5V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. Suface Mount Package. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA Ver 1.3 www.samhop.com.tw Jul,02,2014 Details are subject to change without notice. a TA=25°C ESD HBM > 2KV. TA=70°C 5.6 A TA=70°C 1.28 W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product 23.0 @ VGS=2.5V 15.0 @ VGS=4.0V 17.0 @ VGS=3.7V (TOP VIE W) TSSOP G 2 S 2 S 2 D1/D2 G 1 S 1 S 1 D1/D2 S 1 S 2 G 1 G 2

IGSS ±10 uA VGS(th) 0.5 V m ohm VGS=4.5V , ID=3.5A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=1mA VDS=16V , VGS=0V VGS= ±12V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA ON CHARACTERISTICS STG8810A Ver 1.3 0.8 1.5 gFS 22 S VSD CISS 316 pF COSS 159 pF CRSS 92 pF Qg nC 275 nCQgs 900 nCQgd 750 tD(ON) 8.4 ns tr 1.4 ns tD(OFF) 4.5 ns tf ns Gate-Drain Charge VDS=10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=16V ID=3.5A VGS=4.5V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=5V , ID=3.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Diode Forward Voltage Reverse Transfer Capacitance VGS=2.5V , ID=3.5A m ohm c f=1.0MHz c VDS=16V,ID=7A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1.0A 0.78 1.2 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. c.Guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw Jul,02,2014 13.0 14.5 19.0 23.0 VGS=3.1V , ID=3.5A m ohm 17.0 19.5 m ohm VGS=4.0V , ID=3.5A 13.5 15.0 m ohm VGS=3.7V , ID=3.5A 15.0 17.0 11.5 15.0 14.0 12.0 13.0

Ver 1.3 www.samhop.com.tw Jul,02,2014 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz 0.1 1 10 0.1 100 VGS=4.5V Single Pulse TA=25 C RDS(ON) Limit 0.01 FORWARD BIAS SAFE OPERATING AREA 100us 1ms 10ms DC VDS - Drain to Source Voltage - V ID - Drain Current - A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 2oz Single Pulse PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance - °C/W 100ms 10us

Ver 1.3 www.samhop.com.tw Jul,02,2014 VDS - Drain to Source Voltage - V ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.01 0.1 100 2.521.510.5 VGS - Gate to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 25°C 75°C 125°C TA = -25°C -50 0.4 0.9 0.5 150100500 Tch - Channel Temperature - °C VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ID = 1.0mA 0.01 0.01 0.1 100 1001010.1 ID - Drain Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.0 TA = -25°C 25°C 75°C 125°C 1001010.1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8642 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 3.5 A 1210 0.6 0.7 0.8 VGS = 2.5 V 3.1 V 4.0 V 4.5 V 3.7 V 0.6 VGS = 4.5 V 2.5 V 3.1 V 3.7 V 4.0 V

Ver 1.3 www.samhop.com.tw Jul,02,2014 0.1 100 1000 100101 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0.1 100 1000 101 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS QG - Gate Charge -nC VGS - Gate to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 0.01 0.1 100 0.60.40.20 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -50 150100500 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 V 4.5 V Coss Crss Ciss VDD = 16.0 V VGS = 4.5 V RG = 6 Ω td(on) 8642 ID = 7 A 1.21.00.8 VGS = 0 V 3.7 V ID = 3.5 A 3.1 V VGS = 2.5 V td(off) tr tf VDD = 4.0 V 10 V 16 V

Ver 1.3 www.samhop.com.tw Jul,02,2014 PACKAGE OUTLINE DIMENSIONS TSSOP- 8 0.85 0.033 0.80 0.031 0.19 0.30 0.007 0.012 1. This drawing is for general information only.Refer to JEDEC Drawing MO-153,Variation AA,for proper dimensions,tolerances,datums,etc. 2. Dimension D does not include mold Flash,protrusions or gate burrs.Mold Flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E does not include inter-lead Flash or protrusions.Inter-lead Flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion.Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. Notes: 5. Dimension D and E to be determined at Datum Plane H. DETAIL A DETAIL A MAXMIN MAX MIN

Ver 1.3 www.samhop.com.tw Jul,02,2014 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape TSSOP-8 Reel UNIT : р PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.08TSSOP 8 4.40 1.60 ӿ1.50 + 0.1 - 0.0 ӿ1.50 + 0.1 - 0.0 12.00 ² 0.3 1.75 5.50 ² 0.05 8.00 4.00 2.00 ²0.05 0.30 ²0.05 UNIT : р TAPE SIZE 12 р REEL SIZE ӿ330 M N WW 1 H K SGR V 330 100 12.5 16.0 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5

Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) Ver 1.3 STG8810 XXXXXA SMC internal code No. (A,B,C...Z) TOP MARKING DEFINITION Product No. SamHop Logo Jul,02,2014 www.samhop.com.tw