STG8810 SAMHOP | Alldatasheet
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S mH op Mic roe le c t ronic s C orp.a STG8810 Symbol V DS VGS IDM W A PD 1.5 -55 to 150 ID UnitsParameter °C/W V V±12 T A=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ ) Max 20V 7A 28 @ VGS=2.5V 20 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON) . Rugged and reliable. Suface Mount Package. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-AmbientR JA Ver 1.0 www.samhop.com.tw Nov,26,2008 Details are subject to change without notice. a TA=25°C ESD Protected. (T O P V IE W ) T S S O P G 2 S 2 S 2 D 1/ D2 G 1 S 1 S 1 D 1/ D2 S 1 S 2 G 1 D 1 G 2 D 2 TA=70°C 5.6 A TA=70°C 1 W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product
IGSS ±10 uA VGS(th) 0.5 V 16.5 gFS 12 S VSD CISS 815 pF COSS 215 pF CRSS 180 pF Qg nC nCQgs nCQgd tD(ON) 11.5 ns tr 2.4 ns tD(OFF) ns tf ns Gate-Drain Charge VDS=10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=10V ID=1A VGS=4.5V RGEN=10 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohmV GS=4.5V , ID=7A VDS=5V , ID=7A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage I DSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=16V , VGS=0V VGS= ±12V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=2.5V , ID=6A 23 28 m ohm c f=1.0MHz c VDS=10V,ID=7A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=2.0A 0.79 1.2 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. _ _ STG8810 Ver 1.0 www.samhop.com.tw Nov,26,2008 0.85 1.5 IS Maximum Continuous Drain-Source Diode Forward Current 2.0 A VGS=3V , ID=6.3A m ohm20 25 m ohm17VGS=4V , ID=6.8A 21 b
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area
25 C75 C
Figure 13. Switching Test Circuit Figure 14. Switching Waveforms
- R J A=S e e D a t a s he e t
Ver 1.0 www.samhop.com.tw Nov,26,2008 PACKAGE OUTLINE DIMENSIONS T S S O P -8 0.85 0.033 0.80 0.031 0.19 0.30 0.007 0.012 1. This drawing is for general information only.Refer to JEDEC Drawing MO-153,Variation AA,for proper dimensions,tolerances,datums,etc. 2. Dimension D does not include mold Flash,protrusions or gate burrs.Mold Flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E does not include inter-lead Flash or protrusions.Inter-lead Flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion.Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. Notes: 5. Dimension D and E to be determined at Datum Plane H. DETAIL A DETAIL A MAXMIN MAXMIN
Ver 1.0 www.samhop.com.tw Nov,26,2008 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape TSSOP-8 Reel UNIT :р PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.08TSSOP 8 4.40 1.60 ӿ1.50 + 0.1 - 0.0 ӿ1.50 + 0.1 - 0.0 12.00 ² 0.3 1.75 5.50 ² 0.05 8.00 4.00 2.00 ²0.05 0.30 ²0.05 UNIT :р TAPE SIZE 12 р REEL SIZE ӿ330 M N W W1 H K S G R V 330 100 12.5 16.0 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5