STG8209 SAMHOP | Alldatasheet

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Dual N-C hannel E nhancement Mode F ield E ffect T ransistor S urface Mount P ackage. AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S 12 V Drain C urrent-C ontinuous -P ulsed ID 6 1.7 1.5 A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R J A 85 /WC b S amHop Microelectronics C orp. Dec,29.2005 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mW ) Max 20V 6A F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable.26 @ V G S = 4.0V S T G 8209 40 @ V G S = 2.5V E S D P rotected. (T OP V IE W) T S S OP G 2 S 2 S 2 D1/D2 G 1 S 1 S 1 D1/D2 G 1 S 1 G 2 S 2 a a a a a

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 20 V Zero G ate Voltage Drain C urrent IDS S V DS 16V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 12V,V DS 0V= = 10 uA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 0.5 V Drain-S ource On-S tate R esistance R DS (ON) c C m ohmV G S 4.0V, ID 5A= = 26 F S c SF orward Transconductance g V DS 5V, ID 5A DY NAMIC C HAR AC T E R IS T IC S Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =8V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 10V, ID = 1A, V G E N = 4.0V, R G E N= 10 ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =10V, ID = 5A, V G S =4.0V nC nC nC F all T ime = = V G S 2.5V, ID 3A= = m ohm40 1.50.8 693 136 189 4.9 1.8

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0 V, Is = 1.7A 1.2 V b Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and Temperature ID, Drain C urrent (A) V G S , G ate-to-S ource Voltage (V ) R DS (on) (m W) On-R esistance ID, Drain C urrent (A) R DS (ON), Normalized S T G 8209 25 125 0.8 T j( C ) 10050 75 T j, J unction T emperature ( C ) F igure 1. Output C haracteristics V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) 0 0.5 1 1.5 2 2.5 3 V G S =1.5V V G S =4V V G S =2.5V F igure 3. On-R esistance vs. Drain C urrent and G ate V oltage 3 6 9 12 151 V G S =2.5V V G S =4V T j=125 C V G S =2V 150 a.S urface Mounted on F R 4 B oard, t <=10sec. 25 C V G S =4V ID=5A V G S =2.5V ID=3A 0.8 1.8 1.6 1.4 1.2 1.0 -55 C

F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltage B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 15.0 9.0 1.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA V G S , G ate-S ource Voltage (V ) R DS (on) (m W) F igure 7. On-R esistance vs. G ate-S ource V oltage 2 2.5 3 3.5 40 F igure 5. G ate T hres hold V ariation with T emperature 25 C 125 C ID=5A 6.0 25 C 75 C 75 C 12.0 125 C 3.0

V G S , G ate to S ource V oltage (V ) F igure 10. G ate C harge Q g, T otal G ate C harge (nC ) 0 2 4 6 8 10 12 14 16 V DS =10V ID=5A F igure 9. C apacitance V DS , Drain-to S ource Voltage (V ) C , C apacitance (pF ) 900 750 600 450 300 150 C iss C oss C rss F igure 11.s witching characteris tics R g, G ate R es is tance (W) S witching T ime (ns ) F igure 12. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) ID, Drain C urrent (A) 0.1 0.03 0.1 1 10 30 50 V G S =4V S ingle P uls e T A=25 C 10ms 100ms DC RDS(ON) Limit 100 61 06 01 00 60 030 0 600 VD S= 10V ,I D=1A VGS= V TD (o ff) Tf TD (on) Tr

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H INV E R T E D V DD R D V V R S V G G S IN G E N OUT L 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance Single Pulse on P DM 1. R thJ A (t)=r (t) * R J A 2. R J A=S ee Datasheet 3. T J M-T A = P DM* R J A (t) 4. Duty C ycle, D=t1/t2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 S T G 8209

PAC K AG E OUT LINE DIME NS IONS T S S OP -8

TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape TSSOP-8 Reel UNIT : ㎜ PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.08TSSOP 8 4.40 1.60 ψ1.50 + 0.1 - 0.0 ψ1.50 + 0.1 - 0.0 12.00 ± 0.3 1.75 5.50 ± 0.05 8.00 4.00 2.00 ±0.05 0.30 ±0.05 UNIT : ㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M N W W1 H K S G R V 330 100 12.5 16.0 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 S T G 8209