STG2454 SAMHOP | Alldatasheet

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Suface Mount Package. S mHop Microelectronics C orp.a STG2454 Symbol VDS VGS IDM W A PD 1.5 -55 to 150 ID UnitsParameter 28.5 °C/W V V±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 24V 7A 29 @ VGS=2.5V 17 @ VGS=4.0V

FEATURES

Super high dense cell design for low RDS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA Ver 1.1 www.samhop.com.tw Aug,24,2012 Details are subject to change without notice. a TA=25°C (TOP VIE W) TSSO P G 2 S 2 S 2 D1/D2 G 1 S 1 S 1 D1/D2 S 1 S 2 G 1 G 2 TA=70°C 5.6 A TA=70°C 1 W Dual N-Channel Enhancement Mode Field Effect Transistor Gr PPrPP ESD Protected.

IGSS ±10 uA VGS(th) 0.5 V m ohmVGS=4.0V , ID=7ARDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS ,I D=250uA VDS=19V , VGS=0V VGS=± 1 2 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS= 0 V,ID=250uA ON CHARACTERISTICS STG2454 Ver 1.1 0.8 1.5 gFS 35 S CISS 730 pF COSS 200 pF CRSS 180 pF Qg nC nCQgs 108 nCQgd tD(ON) 12.5 ns tr ns tD(OFF) ns tf ns Gate-Drain Charge VDS=10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=10V ID=1A VGS=4.0V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS= 5 V,ID=7A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance VGS=2.5V , ID=6A m ohm c f=1.0MHz c VDS=10V,ID=7A, VGS=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1.5A 0.78 1.2 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw Aug,24,2012 b 14 17 20 29

Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

25 C -55 C

Ver 1.1 www.samhop.com.tw Aug,24,2012 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Single Pulse P DM 1. R thJ A (t )=r (t ) * RJA 2. R JA =S ee Dat asheet 3. T JM -T A =P DM*R JA (t ) 4. Dut y C ycle, D=t1/t2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 Normalized Transient Thermal Resistance

Ver 1.1 www.samhop.com.tw Aug,24,2012 PACKAGE OUTLINE DIMENSIONS TSSO P- 8 0.85 0.033 0.80 0.031 0.19 0.30 0.007 0.012 1. This drawing is for general information only.Refer to JEDEC Drawing MO-153,Variation AA,for proper dimensions,tolerances,datums,etc. 2. Dimension D does not include mold Flash,protrusions or gate burrs.Mold Flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E does not include inter-lead Flash or protrusions.Inter-lead Flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion.Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. Notes: 5. Dimension D and E to be determined at Datum Plane H. DETAIL A DETAIL A MAXMIN MAX MIN

Ver 1.1 www.samhop.com.tw Aug,24,2012 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape TSSOP-8 Reel UNIT :р PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.08TSSOP 8 4.40 1.60 ӿ1.50 + 0.1 - 0.0 ӿ1.50 + 0.1 - 0.0 12.00 ² 0.3 1.75 5.50 ² 0.05 8.00 4.00 2.00 ²0.05 0.30 ²0.05 UNIT :р TAPE SIZE 12 р REEL SIZE ӿ330 M N WW 1 H K SGR V 330 100 12.5 16.0 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5