STF8810 SAMHOP | Alldatasheet

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Suface Mount Package. S mHop Microelectronics C orp.a STF8810 Symbol VDS VGS IDM W A PD 1.56 -55 to 150 ID UnitsParameter 8.0 °C/W V V±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 20V 8.0A 17.0 @ VGS=4.0V 16.0 @ VGS=4.5V

FEATURES

Super high dense cell design for low RDS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuousc -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA Ver 1.3 www.samhop.com.tw Jul,18,2014 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product ESD Protected. 6.4 1.00 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V 18.0 @ VGS=3.7V S1TT DDFF NN 22XX 33 D1/D2 (Bottom view) 3 4 Bottom Drain Contact PP IINN 11 c

IGSS ±1 uA VGS(th) 0.5 V m ohmVGS=4.5V , ID=2.0A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS ,I D=1.0mA VDS=16V , VGS=0V VGS=± 8 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS= 0 V,ID=250uA ON CHARACTERISTICS STF8810 Ver 1.3 0.9 1.5 gFS 16 S CISS 307 pF COSS 144 pF CRSS 69 pF Qg nC 293 nCQgs 697 nCQgd 567 tD(ON) ns tr 1.8 ns tD(OFF) 5.4 ns tf ns Gate-Drain Charge VDS=10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=16V ID=4.0A VGS=4.0V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=10V , ID=4.0A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance VGS=4.0V , ID=2.0A m ohm b f=1.0MHz b VDS=16V,ID=8.0A, VGS=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=8.0A 0.88 1.2 V www.samhop.com.tw Jul,18,2014 13.0 16.0 13.5 17.0 VGS=3.7V , ID=2.0A m ohm VGS=2.5V , ID=2.0A m ohm20.5 27.5 10.0 10.5 16.5 14.0 18.011.0 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 ,2 o z . _ _

Ver 1.3 www.samhop.com.tw Jul,18,2014 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz 0.1 1 10 0.1 100 VGS=4.5V Single Pulse TA=25 C RDS(ON)Limit 0.01 10us FORWARD BIAS SAFE OPERATING AREA 100us 1ms 10ms 100ms DC VDS - Drain to Source Voltage - V ID - Drain Current - A PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance -°C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 2oz Single Pulse

Ver 1.3 www.samhop.com.tw Jul,18,2014 10.80.60.40.2 VDS - Drain to Source Voltage - V ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 4.5 V 3.1 V 3.7 V 2.5 V 0.01 0.1 100 2.521.510.5 VGS - Gate to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 25°C 75°C 125°C TA = -25°C 0.4 -50 0.6 1.2 0.8 150100500 Tch - Channel Temperature -°C VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ID = 1.0mA 0.01 0.01 0.1 100 1001010.1 ID - Drain Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.4 TA = -25°C 25°C 75°C 125°C 1001010.1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.1 V 4.0 V 8642 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 2.0 A 1210 4.0 V 3.7 V VGS = 2.5 V 4.5 V

Ver 1.3 www.samhop.com.tw Jul,18,2014 0.1 100 1000 100101 VDS - Drain to Source Voltage - V Ciss,C oss,C rss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0.1 100 1000 101 Tch - Channel Temperature -°C td(on),t r,t d(off),t f - Switching Time - ns SWITCHING CHARACTERISTICS QG - Gate Charge -nC VGS - Gate to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 0.01 0.1 100 0.60.40.20 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -50 150100500 Tch - Channel Temperature -°C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 2.0 A VGS = 2.5 V3.1 V 4.0 V 4.5 V Coss Crss Ciss VDD =1 6 . 0V VGS = 4.0 V RG =6 Ω td(on) tr td(off) tf 12963 ID = 8.0 A 10 V 16 V 1.21.00.8 VGS =0V 3.7 V VDD = 4.0 V

www.samhop.com.tw Jul,18,2014 PACKAGE OUTLINE DIMENSIONS Ver 1.3 D PIN #1 DOT BY MARKING TOP VIEW TDFN (2x3)-6 L E TDFN L CF H e P I N# 1I D CHAMFER 0.300mmBOTTOM VIEW A B SIDE VIEW SYMBOLS MILLIMETERS INCHES A D E H L e B C F MIN MAX MIN MAX 0.700 0.800 0.000 0.050 2.950 3.050 1.950 2.050 0.350 0.450 1.450 1.550 1.650 1.750 0.195 0.211 0.200 0.300

0.500 BSC

0.028 0.031 0.000 0.002 0.116 0.120 0.077 0.081 0.014 0.018 0.057 0.061 0.065 0.069 0.0080.0076 0.008 0.012

0.020 BSC

www.samhop.com.tw Jul,18,2014 Ver 1.3 TDFN 2x3-6L 8810 XXXXXX Wafer Lot No. Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) Product No. Pin 1 SMC Internal Code No.(A,B...Z) TOP MARKING DEFINITION