STF8235A

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Suface Mount Package. S mHop Microelectronics C orp.a STF8235A Symbol VDS VGS IDM W A PD 1.67 -55 to 150 ID UnitsParameter °C/W V V±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 20V 11A 6.9 @ VGS=4.5V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous c -Pulsed a c A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA www.samhop.com.tw Jul,08,2015 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product ESD Protected. 3 4 Bottom Drain Contact 8.8 1.07 S1 T DF N 2X5 (Bottom view)P IN 1 D1/D2 Ver 1.0 7.0 @ VGS=4.0V 7.6 @ VGS=3.1V 8.5 @ VGS=2.5V 7.2 @ VGS=3.7V

IGSS ±10 uA VGS(th) 0.5 V RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=1.0mA VDS=16V , VGS=0V VGS= ±12V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA ON CHARACTERISTICS STF8235A 0.7 1.5 gFS 34 S Qg 230 861 nCQgs 3536 nCQgd 2020 tD(ON) ns tr 3.5 ns tD(OFF) ns tf ns Gate-Drain Charge SWITCHING CHARACTERISTICS Gate-Source Charge VDD=20V ID=5.5A VGS=10V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=5V , ID=5.5AForward Transconductance VGS=4.5V , ID=5.5A m ohm b VDS=20V,ID=11A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=11A 0.81 1.2 V www.samhop.com.tw Jul,08,2015 5.3 6.94.0 Ver 1.0 VGS=4.0V , ID=5.5A m ohm 5.4 7.0 VGS=3.7V , ID=5.5A m ohm VGS=2.5V , ID=5.5A m ohm 6.3 8.5 4.1 4.7 5.5 7.24.2 nC26.5VDS=20V,ID=11A,VGS=4.5V Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. _ _

www.samhop.com.tw Jul,08,2015 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 1oz 0.1 1 10 0.1 100 VGS=10V Single Pulse TA=25 C RDS(ON) Limit 0.01 10us FORWARD BIAS SAFE OPERATING AREA 100us 1ms 10ms DC VDS - Drain to Source Voltage - V ID - Drain Current - A 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 1oz Single Pulse PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Ver 1.0

www.samhop.com.tw Jul,08,2015 10.80.60.40.2 VDS - Drain to Source Voltage - V ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.01 0.1 100 2.521.510.5 VGS - Gate to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS -50 0.7 0.6 0.5 150100500 Tch - Channel Temperature - °C VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ID = 1.0mA 0.01 0.01 0.1 100 1001010.1 ID - Drain Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.8 TA = -25°C 25°C 75°C 125°C 1001010.1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8642 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 5.5 A 1210 4.5 V 0.4 VGS = 4.5 V Ver 1.0 VGS = 2.5 V 3.7 V 3.1 V 4.0 V 25°C 75°C 125°C TA = -25°C 3.1 V 3.7 V 2.5 V 4.0 V

www.samhop.com.tw Jul,08,2015 -50 150100500 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 5.5 A Ver 1.0 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V 0.1 100 1000 101 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS VDD = 16.0 V VGS = 4.5 V RG = 6 Ω td(off) td(on) tr tf QG - Gate Charge -nC VGS - Gate to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 3052 0 10 VDD = 4 V 10 V 16 V ID = 11 A 15 25 0.01 0.1 100 0.90.60.30 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.81.51.2 VGS = 0 V

www.samhop.com.tw Jul,08,2015 PACKAGE OUTLINE DIMENSIONS E PIN #1 INDEX AREA TOP VIEW TDFN (2x5)-6L D TDFN be L PIN #1 IDENTIFICATION CHAMFER 0.300 x 45 O BOTTOM VIEW A A1 SIDE VIEW SYMBOLS MILLIMETERS INCHES A D E b e L MIN MAX MIN MAX 0.000 0.050 1.900 2.100 4.900 5.100 1.400 1.500 3.000 3.100 0.200 0.300 0.450 0.550

0.500 BSC

0.000 0.002 0.075 0.083 0.191 0.201 0.055 0.059 0.118 0.122 0.008 0.012 0.018 0.022

0.020 BSC

A A3 0.203 REF. 0.008 REF. 0.700 0.800 0.028 0.031 Ver 1.0

www.samhop.com.tw Jul,08,2015 TDFN 2x5-6L Pin 1 TOP MARKING DEFINITION 8235A XXXXXX Wafer Lot No. Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) Product No. SMC Internal Code No.(A,B...Z) Ver 1.0