STF620S

STF620S SAMHOP | Alldatasheet

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S mH op Mic roe le c t ronic s C orp.a STF620S

FEATURES

Super high dense cell design for low RDS(ON) . Rugged and reliable. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Nov,18,2009 Details are subject to change without notice. S G D Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ ) Max 60V 12A 105 @ VGS=4.5V 75 @ VGS=10V G D S STF SERIES TO-220F Green Product Symbol VDS VGS IDM EAS W A PD -55 to 150 ID UnitsParameter °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 30 mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energyd Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA A9.6TC=70°C TC=70°C 13.3 W a a

IGSS ±100 nA VGS(th) V gFS S CISS pF COSS pF CRSS pF Qg nC tD(ON) ns tr ns tD(OFF) ns tf ns VDS=20V,VGS=0V SWITCHING CHARACTERISTICS VDD=30V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohmVGS=10V , ID=6A VDS=5V , ID=6A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=48V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=5A m ohm c f=1.0MHz c STF620S www.samhop.com.tw Nov,18,2009 VSD nCQgs nCQgd Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=30V,ID=6A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1.5A V IS Maximum Continuous Drain-Source Diode Forward Current A Notes nC VDS=30V,ID=6A,VGS=10V VDS=30V,ID=6A,VGS=4.5V b a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25 °C,L=0.5mH,VDD = 30V.(See Figure13) _ _ Ver 1.0 982 13.4 21.4 17.3 80 105 2.2 0.81 1.3 1.5 7.6 1 2 3 14.8

F igure 1. O ut put C ha ra c t e ris t ic s F igure 2. Tra ns fe r C ha ra c t e ris t ic s V G S , G a t e -t o-S ource V olt a ge (V )V D S, D ra in-t o-S ourc e V olt a ge (V ) ID , D ra in C urre nt( A ) ID , D ra in C urre nt (A ) ID , D ra in C urre nt (A ) R D S (on) (m ) F igure 3. O n-R e s is t a nc e vs . D ra in C urre nt a nd G a t e V olt a ge F igure 4. O n-R e s is t a nc e Va ria t ion wit h D ra in C urre nt a nd Te mpe ra t ure O n-R e s is t a nc eR D S (O N ), T j( C ) T j, J unc tion T e mpe ra ture ( C ) Ω F igure 6 . B re a k down V olta ge V a ria tion with T e mpe ra ture V th, N orma liz e d G a te -S ourc e T hre s hold V olta ge B V D S S, N orma liz e d D ra in-S ourc e B re a k down V olta ge T j, J unc tion T e mpe ra ture ( C ) T j, J unc tion T e mpe ra ture ( C ) F igure 5 . G a te T hre s hold V a ria tion with T e mpe ra ture STF620S Ver 1.0 www.samhop.com.tw Nov,18,2009 VG S = 3.5V VG S = 4V VG S = 4.5V VG S = 10V

25 C -55 C

T j=125 C 150 125 100 1 3 6 9 12 15 V G S =10V V G S =4. 5V 3. 0 2. 6 2. 2 1. 8 1. 4 1. 0 0 1007525 50 125 150 V G S =10V ID =6A V G S =4. 5V ID =5A 0 . 4 0 . 2 1 . 6 1 . 4 1 . 2 1 . 0 0 . 8 0 . 6 1 2 5 1 5 0 1 0 07 55 02 50- 2 5- 5 0 V D S =V G S I D =2 5 0 uA 1 . 3 0 1 . 2 0 1 . 1 0 1 . 0 0 0 . 9 0 0 . 8 0 0 . 7 0 1 2 5 1 5 01 0 07 55 02 50- 2 5- 5 0 I D =2 5 0 uA

I s , S ourc e -dra in c urre nt ( A ) F igure 8 . B ody D iode F orwa rd V olta geV a ria tion with S ourc e C urre nt V S D , B ody D iode F orwa rd V olta ge ( V )V G S , G a t e - S ourc e V olt a ge (V ) R D S (on) (m ) F igure 7. O n-R e s is t a nc e vs .G a t e -S ource V olt a ge Ω F igure 1 2 . Ma x imum S a fe O pe ra ting A re a V D S , D ra in-S ourc e V olta ge ( V ) I D , D ra in C urre nt ( A ) V G S , G a te to S ourc e V olta ge ( V ) F igure 1 0 . G a te C ha rge Q g, T ota l G a te C ha rge ( nC ) F igure 9. C a pa c it a nc e V D S, D ra in-t o S ource V olt a ge (V ) C , C a pa c it a nc e (pF ) F igure 1 1 . s witc hing c ha ra c te ris tic s R g, G a te R e s is ta nc e (W) S witc hing T ime ( ns ) STF620S Ver 1.0 www.samhop.com.tw Nov,18,2009 C is s C os s C rs s 1200 1000 800 600 400 200 10 15 20 25 30 0 5 180 150 120 2 4 6 8 100 I D = 6 A 25 C 75 C 125 C 20.0 10.0 1.0 5.0 25 C 75 C 125 C 1 0 0 3 6 9 1 2 1 5 1 8 2 1 2 4 V D S =30 V I D = 6 A 1 1 0 1 0 0 1 0 1 0 0 3 0 0 V D S = 3 0 V , I D = 1 A V G S = 1 0 V T r T D ( o f f ) T f T D ( o n ) 0.1 1 10 60 0.1 0.03 VGS=10V Single Pulse TA=25 C RDS(O N ) Limit D C 1 0ms 1 ms 1 00us

V ( B R )D S S I A S R G IA S 0 .0 1tp D .U .T LV D S - VD D D R I V E R A 1 5V 2 0 V F igure 13a. F igure 13b. Unc l amped sInduct ive Te t Circu it of r mWave sUnc l amped Induct ive 0.01 0.1 P D M 1. R J C (t )=r (t ) * 2. =S e e D a t a s he e t 3. T J M- T C = P * (t ) 4. D ut y C yc le , D =t 1/ t 2 R J C R J C R J C T ra ns ie nt T he rma l Impe da nc e S qua re W a ve P uls e D ura t ion (ms e c ) F igure 14. N orma liz e d T he rma l T ra ns ie nt Impe da nc e C urve r(t ), N orma liz e d E ffe c t ive STF620S Ver 1.0 www.samhop.com.tw Nov,18,2009 D = 0 . 5 0.05 0.02 0.2 0.1 0.01 S ingle P uls e

Ver 1.0 www.samhop.com.tw Nov,18,2009 E D H D G I J F O A b c E O e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70

Ver 1.0 www.samhop.com.tw Nov,18,2009 F Tube