STF443

STF443 SAMHOP | Alldatasheet

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Suface Mount Package. S mHop Microelectronics C orp.a STF443 Symbol VDS VGS IDM W A PD 1.67 -55 to 150 ID UnitsParameter -20 -4.5 -23 °C/W V V±10 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -20V -4.5A 48 @ VGS=-4.0V 47 @ VGS=-4.5V

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Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA Ver 1.0 www.samhop.com.tw Apr,26,2013 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Green Product ESD Protected. -3.6 1.07 56 @ VGS=-3.1V 64 @ VGS=-2.5V 50 @ VGS=-3.7V P-Channel Enhancement Mode Field Effect Transistor S G D d T DF N 2X2 P IN 1 S D D D D G

IGSS ±10 uA VGS(th) -0.5 V m ohm VGS=-4.5V , ID=-2.25A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=-1.0mA VDS=-16V , VGS=0V VGS= ±10V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=-250uA ON CHARACTERISTICS STF443 Ver 1.0 -0.75 -1.5 gFS 13 S CISS 880 pF COSS 174 pF CRSS 134 pF Qg nC nCQgs 225 nCQgd 148 tD(ON) 11.4 ns tr 0.8 ns tD(OFF) 4.6 ns tf ns Gate-Drain Charge VDS=-10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=-16V ID=-2.25A VGS=-4.5V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=-5V , ID=-2.25A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance VGS=-4.0V , ID=-2.25A m ohm c f=1.0MHz c VDS=-16V,ID=-4.5A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=-4.5A -0.92 -1.2 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum junction temperature. _ _ www.samhop.com.tw Apr,26,2013 36 47 37 48 VGS=-3.7V , ID=-2.25A m ohm VGS=-2.5V , ID=-2.25A m ohm 47 64 VGS=-3.1V , ID=-2.25A m ohm 42 5632 38 5029

Ver 1.0 www.samhop.com.tw Apr,26,2013 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz 0.1 1 10 0.1 100 VGS=-4.5V Single Pulse TA=25 C RDS(ON) Limit 0.01 FORWARD BIAS SAFE OPERATING AREA 100us 1ms 10ms DC -VDS - Drain to Source Voltage - V -ID - Drain Current - A 100ms PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 2oz Single Pulse

Ver 1.0 www.samhop.com.tw Apr,26,2013 10.80.60.40.2 -VDS - Drain to Source Voltage - V -ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = -4.5 V 0.01 0.1 100 2.521.510.5 -VGS - Gate to Source Voltage - V -ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 25°C 75°C 125°C TA = -25°C -50 0.5 0.8 0.7 0.6 150100500 Tch - Channel Temperature - °C -VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ID = -1.0mA 0.01 0.01 0.1 100 1001010.1 -ID - Drain Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.9 TA = -25°C 25°C 75°C 125°C 1001010.1 -ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 2.5 V 3.1 V 4.0 V 4.5 V 120 8642 -VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = -2.25 A 1210 3.7 V 100 -4.0 V -3.1 V -3.7 V -2.5 V

Ver 1.0 www.samhop.com.tw Apr,26,2013 QG - Gate Charge -nC -VGS - Gate to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 0.01 0.1 100 0.90.60.30 -VF(S-D) - Source to Drain Voltage - V -IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -50 150100500 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = -2.25 A 100 VGS = -2.5 V -3.1 V -4.0 V -4.5 V 12963 1.81.51.2 VGS = 0 V -3.7 V VDD = -4 V -10 V -16 V ID = -4.5 A -ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 0.1 100 1000 100101 -VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Coss Crss Ciss 0.1 100 101 td(on) td(off) tr tf VDD = -16.0 V VGS = -4.5 V RG = 6 Ω

www.samhop.com.tw Apr,26,2013 PACKAGE OUTLINE DIMENSIONS Ver 1.0 TOP VIEW TDFN 2x2-6L BOTTOM VIEW SIDE VIEW SYMBOLS MILLIMETERS A b c D E MIN MAX 0.550 0.650 0.000 0.050 0.250 0.350 0.200 0.300 e f 1.100 REF. 0.950 1.050 0.650 BSC. NOM 0.600 0.300 0.250 1.000 1.950 2.000 2.050 0.740 0.790 0.840 1.950 2.000 2.050 TDFN (2 x 2) 06L PIN #1 DOT BY MARKING PIN #1 ID CHAMFER 0.300mm D E A b e c L f 0.200 0.300 0.250 L 1.150 1.250 1.200 0.144 0.160 0.152