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Suface Mount Package. S mHop Microelectronics C orp.a STF1016C Symbol VDS VGS IDM W A PD 62.5 -55 to 150 ID UnitsParameter 100 160 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 40A 17 @ VGS=10V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) Limit Drain Current-Continuous c -Pulsed a c A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA www.samhop.com.tw Jul,21,2015 Details are subject to change without notice. TA=25°C TA=25°C W Green Product 1.92 N-Channel Enhancement Mode Field Effect Transistor D D D D G S S S Ver 1.0 196EAS Single Pulse Avalanche Energy e mJ 40TC=25°C TC=100°C A25.3 A 2° C / WThermal Resistance, Junction-to-CaseR JC DF N 3.3 X 3.3 P IN 1 (Bottom view) G S S S DD D D 19 @ VGS=4.5V d

IGSS ±100 nA VGS(th) 1 V m ohm VGS=10V , ID=20A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA ON CHARACTERISTICS STF1016C 2 3 gFS 71 S CISS 2568 pF COSS 190 pF CRSS 158 pF Qg nC nCQgs 115 nCQgd tD(ON) ns tr ns tD(OFF) ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=10V , ID=20A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance VGS=4.5V , ID=19A m ohm b f=1.0MHz b VDS=50V,ID=5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=8A 0.77 1.2 V www.samhop.com.tw Jul,21,2015 17 19.5 19 23 Ver 1.0 VDS=50V,ID=5A,VGS=10V d Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Pulse Test:Pulse Width < 1us, Duty Cycle < 1%. e.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) f.Mounted on FR4 Board of 1 inch2 , 2oz. _ _

Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

2.0 V GS =10V

Figure 14. Normalized Thermal Transient Impedance Curve

www.samhop.com.tw Jul,21,2015 PACKAGE OUTLINE DIMENSIONS Ver 1.0 DFN 3.3 x 3.3 SYMBOLS MILLIMETERS A b D E e G MIN. NOM. MAX. 0.70 0.75 0.10 0.15 0.24 0.30 3.15 3.30 2.10 2.25 3.30 2.15 2.25 0.60 0.65 0.80 0.05 0.25 0.35 3.40 2.35 2.35 0.70 L 0.475 0.525 0.575 D E TOP VIEW G e L D2 BOTTOM VIEW b A SIDE VIEW 3.15 3.40 0.35 0.40 0.45

Ver 1.0 www.samhop.com.tw Jul,21,2015 STF1016C DFN 3.3 x 3.3 Tape and Reel DataDFN 3.3 x 3.3 Tape DFN 3.3 x 3.3 Reel Unit : mm FEEDING DIRECTION T K H SECTION A-A SECTION B-B D1 P2 P1 E D B BP AA DFN 3.3x3.3 PACKAGE H1D D1 E E1 HP P1 P2 TK 3.60 ²0.10 ӿ1.50 (MIN) ӿ1.50 +0.10 - 0.00 1.05 ²0.10 4.0 ²0.10 2.0 ²0.05 0.3 ²0.05 12.0 +0.30 - 0.10 1.75 ²0.10 8.0 ²0.10 3.60 ²0.10 A N W B C TAPE SIZE ANW W 1 W 3 BC 12 mm Unit : mm 330 ²2.0 101.6 ²2.0 1.3 -0.0 12.4 +2.0 -0.0 12.4 +3.0 -0.0 1.7 -2.6 13.2 +3.0 -0.2

DFN 3.3 x 3.3 1016C XXXXXX Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) SMC internal Code No. Pin 1 STF1016C www.samhop.com.tw Jul,21,2015 Ver 1.0