STF06N20 SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. TO-220 and TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Oct,28,2013 Details are subject to change without notice. S G D Ver 1.0 G D S STF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 200V 1.1 @ VGS=10V Symbol VDS VGS IDM W A PD -55 to 175 ID UnitsParameter 200 V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS STP06N20 Drain Current-Continuous -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 62.5 °C/W Thermal Resistance, Junction-to-AmbientR JA TC=25°C 5 ±20 STF06N20 TC=100°C A3.5 3.5

37.5 WTC=100°C

°C/W Thermal Resistance, Junction-to-CaseR JC G D S STP SERIES TO-220 12.5 a 62.5 STP06N20 STF06N20 Green Product 1.3 @ VGS=4.5V

www.samhop.com.tw Oct,28,2013 Ver 1.0

4 Symbol Min Typ Max Units

IGSS ±100 nA VGS(th) 1V gFS 4 S VSD CISS 423 pF COSS 24 pF CRSS 16 pF 9.6 nC 8.7 nCQgs 22.2 nCQgd 4.9 tD(ON) ns tr 0.94 ns tD(OFF) ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=100V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time VDS=100V,ID=1A,VGS=10V Fall Time Turn-On Delay Time ohm VGS=10V , ID=2.5A VDS=10V , ID=2.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=160V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=10mA Reverse Transfer Capacitance ON CHARACTERISTICS 1.5 b f=1.0MHz b VDS=100V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1A 1.4 V 7.2 1.1 0.83 1.6 Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. STP06N20 STF06N20 ohm VGS=4.5V , ID=2.5ARDS(ON) Drain-Source On-State Resistance 1.751.3 Qg nC4VDS=100V,ID=1A,VGS=4.5V

Figure 1. Out put Charact erist ics Figure 2. Transfer Charact erist ics

25 C -55 C

Ver 1.0 www.samhop.com.tw Oct,28,2013 STP06N20 STF06N20

Ver 1.0 www.samhop.com.tw Oct,28,2013 E D H D G I J F O A b c E O e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70 STP06N20 STF06N20

Ver 1.0 www.samhop.com.tw Oct,28,2013 STP06N20 STF06N20

Ver 1.0 www.samhop.com.tw Oct,28,2013 F Tube STP06N20 STF06N20

www.samhop.com.tw10 TOP MARKING DEFINITION TO-220 (GREEN) XXXXXX STP06N20 Product No. SamHop Logo Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SMC internal code No. (A,B,C...Z) 06N20 XXXXX TO-220 (PB FREE) Product No. SamHop Logo Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number PB Free Ver 1.0 STP06N20 STF06N20 Oct,28,2013

www.samhop.com.tw11 TOP MARKING DEFINITION TO-220F (GREEN) Product No. SamHop Logo Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) XXXXXX STF06N20 TO-220F (PB FREE) XXXXX 06N20 Product No. SamHop Logo Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number PB Free SMC internal code No. (A,B,C...Z) Ver 1.0 STP06N20 STF06N20 Oct,28,2013