STE250N06 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH80N06 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW R th JUNCTION TO CASE ■ VERY LOW DRAIN TO CASE CAPACITANCE ■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ■ ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) INDUSTRIAL APPLICATIONS: ■ SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS May 1995 TYPE V DSS R DS(on) ID STE250N06 60 V < 0.004 Ω 250 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-Source Voltage (VGS = 0) 60 V V DGR Drain-Gate Voltage (RGS = 20 kΩ )6 0 V V GS Gate-Source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC2 5 0 A ID Drain Current (continuous) at Tc = 100 oC1 5 5 A IDM (•) Drain Current (pulsed) 750 A P tot Total Dissipation at Tc = 25 oC4 5 0 W Derating Factor 3.6 W/ oC Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC V ISO Insulation Withstand Voltage (AC-RMS) 2500 V (•) Pulse width limited by safe operating area INTERNAL SCHEMATIC DIAGRAM ISOTOP

Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.27 0.05 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA VGS = 0 V 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating x 0.8 Tc = 125 oC 400 µA mA IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 20 V ± 400 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS = VGS ID = 1 mA 2 4 V R DS(on) Static Drain-source On Resistance V GS = 10V ID = 125 A 0.004 Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS = 15 V ID = 125 A 100 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 V 25 10000 3000 nF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 25 V ID = 125 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 1) 300 ns ns (di/dt)on Turn-on Current Slope VDD = 40 V ID = 250 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 3)

440 A/ µs

Q g Total Gate Charge V DD = 40 V ID = 250 A V GS = 10 V 475 nC STE250N06

ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 40 V ID = 250 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 3) 140 745 1000 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 250 750 A A V SD (∗) Forward On Voltage I SD = 250 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 250 A di/dt = 100 A/µ s V DD = 25 V Tj = 150 oC (see test circuit, figure 3) 210 1.31 12.5 ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STE250N06

Static Drain-source On Resistance Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STE250N06

Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-off Drain-source Voltage SlopeTurn-on Current Slope STE250N06

Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times STE250N06

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 0.157 O 7.8 8.2 0.307 0.322 P 5.5 0.216 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA 0041565 STE250N06

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A STE250N06