STC3116E SAMHOP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
S mHop Microelectronics C orp.a
FEATURES
Super high dense cell design for low RDS(ON) . Rugged and reliable. Suface Mount Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Jun,14,2012 Details are subject to change without notice. SO T- 3 2 3 G S D STC3116E Ver 1.0 Grerr PPrPP orr Symbol VDS VGS IDM W A PD -55 to 150 ID UnitsParameter V V±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG 125Thermal Resistance, Junction-to-AmbientR JA TA=25°C Limit TA=70°C A1.6
0.64 WTA=70°C
°C/W PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 30V 2A 107 @ VGS=4.5V 94 @ VGS=10V 139 @ VGS=2.5V ESD Protected. S G D
www.samhop.com.tw Jun,14,2012 VGS=± 1 2 V,VDS=0V VGS=0V,IS= 1.0A 0.82 ±10 0.5 6.5 396 413 3.8 0.6 1.3 VDS=15V,VGS=0V VDD=15V ID=1A VGS=10V RGEN=6o h m VDS=5V , ID=1.0A VDS=24V , VGS=0V VGS= 0 V,ID=250uA 0.9 1.5 Symbol Min Typ Max Units BVDSS V IGSS uA VGS(th) V gFS S VSD CISS pF COSS pF CRSS pF Qg nC nCQgs nCQgd tD(ON) ns tr ns tD(OFF) ns tf ns Gate-Drain Charge SWITCHING CHARACTERISTICS Gate-Source Charge Total Gate Charge Rise Time Turn-Off Delay Time VDS=15V,ID=1.0A,VGS=10V Fall Time Turn-On Delay Time Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage Reverse Transfer Capacitance ON CHARACTERISTICS c c VDS=15V,ID=1.0A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS 1.2 V Notes _a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. f=1.0MHz VDS=VGS ,I D=250uA Ver 1.0 103VGS=2.5V , ID=0.8A 139 m ohm 75VGS=10V , ID=1.0A 94 m ohm 82VGS=4.5V , ID=0.9A 107 m ohmRDS(ON) Drain-Source On-State Resistance
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area
25 C75 C
Figure 7. Normalized Thermal Transient Impedance Curve
www.samhop.com.tw Jun,14,2012 PACKAGE OUTLINE DIMENSIONS SOT 323 D E e b 1 2 L DETAIL "A" MILLIMETERS INCHESSYMBOLS D E 1.900 2.100 2.000 2.200 E1 1.150 1.350 e b 0.150 0.300 C 0.080 0.250 A A1 A 0.000 0.100 0.800 1.000 L O O 0.074 0.084 0.078 0.086 0.045 0.055 0.006 0.012 0.003 0.010 0.000 0.004 0.031 0.040 O O MIN MAX MIN MAX
0.650 BSC
1.300 BSC
0.260 DETAIL "A" 0.460 0.010 0.018 Ver 1.0
www.samhop.com.tw Jun,14,2012 SOT-323 Tape and Reel Data SOT-323 Carrier Tape SOT-323 Reel О178 О178 О60 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 2.00 ²0.5 О10.0 18.005.008р V UNIT:р RGSKHW1WNM 10.5 REEL SIZETAPE SIZE TR FEED DIRECTION STC3116E 2.40 ²0.10 2.40 ²0.10 1.19 ²0.10 О1.00 +0.25 О1.50 +0.10 8.00 +0.30 -0.10 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.254 ²0.02 UNIT:р PACKAGE SOT-323 A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T Ver 1.0