STB31L01 SAMHOP | Alldatasheet
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S mHop Microelectronics C orp.a STB31L01 Symbol VDS VGS IDM AID UnitsParameter 100 V V±20Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 100V 26A 49 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON) . Rugged and reliable. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a A Ver 1.1 www.samhop.com.tw Sep,20,2012 Details are subject to change without notice. TC=25°C WPD °C-55 to 175 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG 2 °C/WThermal Resistance, Junction-to-CaseR JC TC=70°C A TC=70°C W Grerr PPrPP orr 21.8 52.5 62.5 °C/WThermal Resistance, Junction-to-AmbientR JA STB SERI ES TO-263(DD-P AK) GG SS DD EAS Single Pulse Avalanche Energyc mJ36
IGSS ±100 nA VGS(th) V gFS S CISS 1460 pF COSS 88 pF CRSS 75 pF Qg nC tD(ON) ns tr ns tD(OFF) ns tf ns VDS=25V,VGS=0V SWITCHING CHARACTERISTICS VDD=50V ID=1A VGS=10V RGEN=6o h m Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohmVGS=10V , ID=13A VDS=10V , ID=13A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS ,I D=250uA VDS=80V , VGS=0V VGS=± 2 0 V,VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS b f=1.0MHz b STB31L01 Ver 1.1 www.samhop.com.tw Sep,20,2012 VSD nCQgs nCQgd 2.6 9.3Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=50V,ID=13A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=4A 0.79 1.3 V Notes VDS=50V,ID=13A,VGS=10V a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,V DD=50V.(See Figure13) _ _ 1 2.0 3
Ver 1.1 www.samhop.com.tw Sep,20,2012
Ver 1.1 www.samhop.com.tw Sep,20,2012